Title:
FILM DEPOSITION METHOD
Document Type and Number:
Japanese Patent JP2021044534
Kind Code:
A
Abstract:
To increase productivity of a semiconductor device arranged by selective deposition.SOLUTION: A film deposition method is arranged to perform selective film deposition on a substrate. The film deposition method comprises: a preparation step; a first film deposition step; a second film deposition step; and a first removal step. In the preparation step, a substrate with first and second films exposed from a surface thereof is prepared. In the first film deposition step, a compound having a functional group containing fluorine and carbon for deposition of a self-organization monomolecular film serving to suppress the growth of a third film is supplied onto the substrate, whereby the self-organization monomolecular film is deposited on the first film. In the second film deposition step, the third film is deposited on the second film. In the first removal step, the third film formed in the vicinity of the self-organization monomolecular film is removed by applying at least ions or active species to the surface of the substrate. The third film is a film which easily binds to fluorine and carbon included in the self-organization monomolecular film to form a volatile compound in comparison with the first film.SELECTED DRAWING: Figure 2
More Like This:
Inventors:
OUCHI KENJI
SHINONOME SHUJI
KONO YUMIKO
IKE CHINICHI
SHINONOME SHUJI
KONO YUMIKO
IKE CHINICHI
Application Number:
JP2020092874A
Publication Date:
March 18, 2021
Filing Date:
May 28, 2020
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/316; C23C16/455; H01L21/3065; H01L21/31
Attorney, Agent or Firm:
Sakai International Patent Office