MANUFACTURE OF SEMICONDUCTOR DEVICE

Japanese Patent JPS61150329

A

PURPOSE:To form a finer photoresist pattern than those obtainable by conventional light-exposing techniques and to provide finer elements, by leaving a second photoresist pattern on the side walls of a first photoresist pattern through first and second processes. CONSTITUTION:An N<+> type buried region 2, an epitaxial layer 3, a field oxide film 4 and an N<+> type collector leading-out region 5 are formed on the surface of a P-type silicon substrate 1 successively in that order by respectively predeter mined processes. A thermal oxide film 6 is then provided thereon and boron ions are implanted into a part of the layer 3 with the use of a photoresist pattern not shown and the oxide film 4 as masks so that a P-type base region 7 is formed. A first positive-type photoresist is applied on the whole surface, exposed and developed to form a first photoresist pattern 8. Subsequently, a second positive-type photoresist 9 is applied thereon so as to be thicker on the side walls of the pattern 8 than on the other portions. The resist 9 is devel oped to form a second photoresist pattern 9' on the side walls of the pattern 8.

WO/1998/059364	PROJECTION ALIGNER, METHOD OF MANUFACTURING THE ALIGNER, METHOD OF EXPOSURE USING THE ALIGNER, AND METHOD OF MANUFACTURING CIRCUIT DEVICES BY USING THE ALIGNER
JP7300823	Resist composition and resist pattern forming method
JP5839865	Electrical connection system and lithography equipment

NAKA HIDEYUKI

JP27181884A

July 09, 1986

December 25, 1984

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TOSHIBA CORP

G03F7/20; H01L21/027; H01L21/30; (IPC1-7): G03F7/20

Takehiko Suzue

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