To control variations in size in the wafer surface of a pattern.
The method includes the steps of performing shooting on a resist film 8 on a wafer 7 using a first exposure parameter with a first pattern and a second pattern whose size is larger than that of the first pattern as exposure objects for one shot multiple times, processing the resist film 8 so that a resist pattern formed based on the first pattern has a desired size, measuring the size of a resist pattern formed based on the second pattern and forming size distribution information 512 in a wafer 7 surface, determining a second exposure parameter including an exposure parameter other than an exposure amount so that the size of the resist pattern formed based on the second pattern is a desired size in a plurality of shot regions, performing shooting on the resist film 8 using the second exposure parameter multiple times, and forming a second resist pattern under processing conditions.
TAKIMOTO MICHIYA
KOTANI TOSHIYA
FUKUHARA KAZUYA
TAGUCHI TAKAFUMI
MUKAI HIDEFUMI
Kenji Tsunoda
Keiko Nakamura
Endo Wako
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