To provide a method for manufacturing a semiconductor device which is capable of promoting supplying gas to spaces between adjacent substrates without reducing the number of substrates which can be collectively processed.
The method of manufacturing a semiconductor device includes the steps of: carrying substrates 10 stacked in many stages in a horizontal posture into a processing chamber 4; processing the substrates 10 by supplying a processing gas into the processing chamber 4 from one or more processing gas supply nozzles 22a and 22b extending along an inner wall of the processing chamber 4 in the stacking direction of the substrates 10 and by supplying an inactive gas into the processing chamber from a pair of inactive gas supply nozzles 22c and 22d provided so as to extend along the inner wall of the processing chamber 4 in the stacking direction of the substrates 10 and to sandwich the processing gas supply nozzles 22a and 22b from both sides thereof along a circumferential direction of the substrates 10; and carrying the processed substrates out from the processing chamber.
TAKEBAYASHI YUJI
KATO TSUTOMU
SASAKI SHINYA
YAMAZAKI HIROHISA
| JPH1032169A | 1998-02-03 | |||
| JP2007281082A | 2007-10-25 | |||
| JPH0316208A | 1991-01-24 | |||
| JP2010080657A | 2010-04-08 | |||
| JPH03255618A | 1991-11-14 |
Aniya Setsuo
Hitoshi Kiyono
Fukuoka Masahiro