PURPOSE: To obtain a processing method which facilitate precise processing and is clean enough not to induce defects by a method wherein an electron beam is applied to a compound semiconductor and, at the same time, at least one type of gas selected among halogens and halogen compounds is supplied to the compound semiconductor as reactive gas.
CONSTITUTION: In order to process a compound semiconductor 15 by etching with reactive gas, an electron beam 14 is applied to the semiconductor 15 and, at the same time, at least one type of gas selected among halogens and halogen compounds is supplied to the compound semiconductor 15 as the reactive gas. For instance, after a sample chamber 11 is evacuated to an extra-high vacuum, the electron beam 14 and the Cl2 gas 16 are applied to the GaAs sample 15 simultaneously. At that time, the electron beam 14 is condensed so as to have a beam diameter not larger than 0.1μm and accelerated with an acceleration voltage of 10kV and the Cl2 gas 16 is supplied with a pressure about 10Torr. If the electron beam 14 is scanned by deflection electrodes, only the parts to which the electron beam 14 is applied is etched.
TANETANI MOTOTAKA
AKITA KENZO
HIDAKA HIROMI
| JPS6276521A | 1987-04-08 | |||
| JPH01292827A | 1989-11-27 |