Title:
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Document Type and Number:
Japanese Patent JP2019201034
Kind Code:
A
Abstract:
To provide a nonvolatile semiconductor memory capable of writing and reading at high speed, and which is appropriate for an integration at high density.SOLUTION: A semiconductor device comprises: a first reflection circuit containing an n-type FET and a p-type FET; a second reflection circuit that includes the n-type FET and the p-type FET, in which an output is connected to an input of the first reflection circuit, and the input is connected to the output of the first reflection circuit; a first ferroelectric capacitor of which one electrode is connected to the input of the first reflection circuit; a second ferroelectric capacitor of which one of the electrode is connected to the input of the second reflection circuit; and a plate line connecting the other one of the electrode of the first ferroelectric capacitor and the other one of the electrode of the second ferroelectric capacitor.SELECTED DRAWING: Figure 1
More Like This:
Inventors:
TSUKAMOTO MASANORI
Application Number:
JP2018092986A
Publication Date:
November 21, 2019
Filing Date:
May 14, 2018
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP
International Classes:
H01L21/8239; G11C11/22; G11C11/412; H01L21/8229; H01L27/102; H01L27/105; H01L27/11502
Attorney, Agent or Firm:
Miaki Kametani
Tetsuo Kanamoto
Koji Hagiwara
Kazuki Matsumoto
Tetsuo Kanamoto
Koji Hagiwara
Kazuki Matsumoto