To promote large capacity, high performance and high reliability of a semiconductor memory device, by attaining high-performance of both a semiconductor device and a memory element, when the semiconductor memory device is manufactured by stacking a memory element, such as, ReRAM or a phase change memory and the semiconductor device.
After a polysilicon forming a selection element is deposited in an amorphous state at a low temperature, crystallization and activation of impurities are performed with heat treatment, in a short time, by laser annealing. When laser annealing is performed, a recording material which is located below the silicon subjected to the crystallization is completely covered with a metal film or with the metal film and an insulating film, thereby making it possible to suppress a temperature increase, at annealing and is able to reduce the thermal load on the recording material.
TAKEMURA RIICHIRO
KINOSHITA KATSUJI
MINE TOSHIYUKI
SHIMA AKIO
MATSUOKA HIDEYUKI
HATANO MUTSUKO
TAKAURA NORIKATSU
