Title:
SILICON-ON-INSULATOR SEMICONDUCTOR CIRCUIT
Document Type and Number:
Japanese Patent JP2000323720
Kind Code:
A
Abstract:
To actualize a circuit having a structure which eliminates a through current at the time of input of intermediate level and is usable together with a conventional CMOS circuit without adding any special process.
This silicon-on-insulator (SOI) semiconductor device is characterized by that the drain of an N channel MOS transistor is connected to a high- potential side power source and a P channel MOS transistor 8 has its drain connected to a low-potential side power source, its gate for input, and the source and substrate for output.
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Inventors:
ANDO YOSHIFUMI
Application Number:
JP16574499A
Publication Date:
November 24, 2000
Filing Date:
May 11, 1999
Export Citation:
Assignee:
ANDO YOSHIFUMI
International Classes:
H01L27/08; H01L21/8238; H01L27/092; H01L29/786; (IPC1-7): H01L29/786; H01L21/8238; H01L27/08; H01L27/092
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