PURPOSE: To enable debugging, correction, defect analysis, etc., of the IC element to be easily performed by a method wherein a wiring connecting device is to be provided with respective specific vessel, metallic compound gas lead-in means, alignment scanning means and focussed energy beam radiating means.
CONSTITUTION: A wiring connecting device is provided with vessels 16, 39 wherein IC element 18 is arranged, a metallic compound gas lead-in means 9 and alignment scanning means 17, 40 relatively aligning and scanning focussed energy beams and the IC element 18 to scan and irradiate the focussed energy beams on the surface insulating film at the wiring position to be connected on the IC element 18 along a specific path as well as a focussed energy beam irradiating means 26 forming a new metallic wiring along a specific path by irradiating the focussed energy beams on the specific path on said surface insulating film and depositing a metallic film on a local path by the focussed energy beam induced CVD process using the metallic compound gas.
HONGO MIKIO
MIYAUCHI TAKEOKI
SHIMASE AKIRA
HARAICHI SATOSHI
TAKAHASHI TAKAHIKO
SAITOU KEIYA
| JPS59162267A | 1984-09-13 | |||
| JPS60228675A | 1985-11-13 | |||
| JPS5680131A | 1981-07-01 | |||
| JPS60236233A | 1985-11-25 | |||
| JPS6021844A | 1985-02-04 | |||
| JPS614224A | 1986-01-10 | |||
| JPS59168652A | 1984-09-22 | |||
| JPS60245227A | 1985-12-05 | |||
| JPS5621347A | 1981-02-27 |
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