Title:
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2017/113484
Kind Code:
A1
Abstract:
Provided are a high electron mobility transistor (100) and a method for manufacturing same. The high electron mobility transistor (100) comprises: a substrate (10), a gallium nitride buffer layer (20) formed on the substrate (10), an AlxGa(1-x)N barrier layer (30) formed on the gallium nitride buffer layer (20), a gate (60), a source (40) and a drain (50) respectively formed on the AlxGa(1-x)N barrier layer (30), and a passivation layer (70). In the AlxGa(1-x)N barrier layer (30), Al components in a transverse direction are different, and are gradually reduced from a gate end to a drain end. With respect to the prior art, the high electron mobility transistor has the AlxGa(1-x)N barrier layer with different Al components in the transverse direction, so that the AlxGa(1-x)N barrier layer at the edge, close to the drain end, of the gate has the characteristics of different components, and the Al components are gradually reduced from the gate end to the drain end, thereby being capable of reducing the current collapse effect, and increasing the turn-on voltage.
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Inventors:
CHEN JIACHENG (CN)
YAO JIANKE (CN)
DING QING (CN)
YAO JIANKE (CN)
DING QING (CN)
Application Number:
PCT/CN2016/074013
Publication Date:
July 06, 2017
Filing Date:
February 18, 2016
Export Citation:
Assignee:
CHINA COMMUNICATION MICROELECTRONICS TECH CO LTD (CN)
International Classes:
H01L29/778; H01L21/335; H01L29/10
Foreign References:
| CN104201202A | 2014-12-10 | |||
| CN104037220A | 2014-09-10 | |||
| CN104813477A | 2015-07-29 | |||
| US20120153356A1 | 2012-06-21 |
Attorney, Agent or Firm:
BEIJING LAWSING IP FIRM (CN)
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