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Title:
METHOD FOR REDUCING DAMAGE TO MAGNETIC TUNNEL JUNCTION OF MRAM
Document Type and Number:
WIPO Patent Application WO/2023/019804
Kind Code:
A1
Abstract:
Provided in the present invention is a method for reducing damage to a magnetic tunnel junction (MTJ) of an MRAM. The method comprises: providing a base structure, wherein the base structure comprises a substrate, a lower electrode, an MTJ layer and an upper electrode, which are sequentially arranged in a first direction, the first direction being perpendicular to the substrate and pointing from the substrate to the lower electrode; performing first-time etching processing from the surface on the side of the upper electrode that faces away from the substrate until the lower electrode is exposed; preprocessing a side wall of the MTJ layer, such that the side wall of the MTJ layer reacts to form a modified layer of a preset thickness; and performing second-time etching processing until the substrate is exposed. By means of the method, a side wall of an MTJ layer is preprocessed, such that the side wall of the MTJ layer reacts to form a modified layer of a preset thickness; and the modified layer can perform scattering processing on incident ions in a subsequent etching process, so as to reduce damage to an MTJ to the greatest extent.

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Inventors:
YANG YUXIN (CN)
LI JIAHE (CN)
PENG TAIYAN (CN)
HU DONGDONG (CN)
XU KAIDONG (CN)
Application Number:
PCT/CN2021/134976
Publication Date:
February 23, 2023
Filing Date:
December 02, 2021
Export Citation:
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Assignee:
JIANGSU LEUVEN INSTR CO LTD (CN)
International Classes:
H01L43/12
Foreign References:
CN108232002A2018-06-29
CN108242504A2018-07-03
US20180033957A12018-02-01
CN202110962630A2021-08-20
Attorney, Agent or Firm:
UNITALEN ATTORNEYS AT LAW (CN)
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