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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/145819
Kind Code:
A1
Abstract:
Provided is a semiconductor device having a high operating frequency. The semiconductor device comprises a transistor which includes: a first conductive layer; a first insulation layer over the first conductive layer; a second insulation layer over the first insulation layer; a first oxide over the second insulation layer; a second oxide over the first oxide; a third oxide over the second oxide; a third insulation layer over the third oxide; a second conductive layer over the third insulation layer; and a fourth insulation layer. The first conductive layer and the second conductive layer comprise a region overlapping with the second oxide. The side surfaces of the second conductive layer, the third insulation layer and the third oxide are substantially aligned with each other. The fourth insulation layer is in contact with the side surfaces of the second conductive layer, the third insulation layer and the third oxide, and with a part of the upper surface of the second oxide. When the height of the bottom surface of the second conductive layer in the region not overlapping with the second oxide in the channel width direction of the transistor serves as a reference, the height of the bottom surface of the second oxide is at least -5nm and less than 0nm.

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Inventors:
NONAKA YUSUKE
ISHIHARA NORITAKA
HIRAMATSU TOMOKI
HONDA RYUNOSUKE (JP)
KAMOGAWA TOMOYO (JP)
HODO RYOTA (JP)
TOCHIBAYASHI KATSUAKI (JP)
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2019/050285
Publication Date:
August 01, 2019
Filing Date:
January 15, 2019
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/336; H01L21/8242; H01L27/108; H01L27/1156; H01L29/788; H01L29/792
Foreign References:
JP2014239213A2014-12-18
JP2015005740A2015-01-08
JP2016111369A2016-06-20
JP2016208023A2016-12-08
JP2015038974A2015-02-26
JP2015053477A2015-03-19
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