SLURRY FOR CHEMICAL MECHANICAL POLISHING, METHOD OF CHEMICAL MECHANICAL POLISHING AND PROCESS FOR MANUFACTURING ELECTRONIC DEVICE

Title:

SLURRY FOR CHEMICAL MECHANICAL POLISHING, METHOD OF CHEMICAL MECHANICAL POLISHING AND PROCESS FOR MANUFACTURING ELECTRONIC DEVICE

Document Type and Number:

WIPO Patent Application WO/2007/135794

Kind Code:

A1

Abstract:

A slurry for chemical mechanical polishing that in the CMP step of semiconductor device, not only attains low scratch on a surface to be polished of SiO2 film, etc. but also realizes high polishing velocity to thereby achieve high processing efficiency; a method of chemical mechanical polishing by the use of the slurry; and a process for manufacturing an electronic device by the use of the method. There is provided a slurry for chemical mechanical polishing comprising abrasive grains and water, wherein the abrasive grains consist of ceria particle coated composite grains each composed of an organic base grain and ceria particles, and wherein the composite grains exhibit a negative zeta potential. Further, there are provided slurries wherein the abrasive grains consist of ceria particle coated composite grains each composed of a carboxylated polymethyl methacrylate grain and ceria particles, and wherein a planarizing additive is mixed, and wherein the planarizing additive is ammonium poly(meth)acrylate.

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Inventors:

OTA RYO (JP)
NAKAKAWAJI TAKAYUKI (JP)
ASHIZAWA TORANOSUKE (JP)
KOYAMA NAOYUKI (JP)

Application Number:

PCT/JP2007/053629

Publication Date:

November 29, 2007

Filing Date:

February 27, 2007

Export Citation:

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Assignee:

HITACHI CHEMICAL CO LTD (JP)
OTA RYO (JP)
NAKAKAWAJI TAKAYUKI (JP)
ASHIZAWA TORANOSUKE (JP)
KOYAMA NAOYUKI (JP)

International Classes:

B24B37/00; H01L21/304; C09K3/14

Foreign References:

JP2003282498A	2003-10-03
JP2006041252A	2006-02-09
JP2002030271A	2002-01-31
JP2005251996A	2005-09-15

Attorney, Agent or Firm:

HIRAKI, Yusuke (3-20 Toranomon 4-chome Minato-ku Tokyo, 01, JP)

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