Title:
TRENCH POWER DEVICE AND SOURCE CAPACITOR INTEGRATION AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/100410
Kind Code:
A1
Abstract:
The present invention relates to the field of power device semiconductor manufacturing. Disclosed are a trench power device and source capacitor integration and a manufacturing method therefor. The method comprises the following steps: A, preparing a cellular structure; B, manufacturing a trench power device, the trench power device comprising a contact hole and a tungsten bolt; C, connecting ESD and an integrated circuit to the trench power device; and D, depositing a passivation layer, etching a bonding pad region, and carrying out wire bonding packaging. In the present invention, while the trench power device is manufactured, an integrated source capacitor is also manufactured. As no mask is added, the cost is controllable. The trench power device of the integrated capacitor can reduce the use of an external capacitor, thereby reducing the use area of a printed circuit board, and achieving the purposes of cost reduction and device miniaturization.
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Inventors:
ZHAO YI (CN)
SHI LIANG (CN)
SHI LIANG (CN)
Application Number:
PCT/CN2021/125673
Publication Date:
May 19, 2022
Filing Date:
October 22, 2021
Export Citation:
Assignee:
CHONGQING ALPHA AND OMEGA SEMICONDUCTOR LTD (CN)
International Classes:
H01L21/8234; H01L27/06
Foreign References:
| CN112382613A | 2021-02-19 | |||
| CN101083265A | 2007-12-05 | |||
| CN108389858A | 2018-08-10 | |||
| CN101667574A | 2010-03-10 | |||
| CN104576532A | 2015-04-29 | |||
| CN102255527A | 2011-11-23 |
Other References:
See also references of EP 4246562A4
Attorney, Agent or Firm:
SHANGHAI AI ZHI SHAN INTELLECTUAL PROPERTY AGENCY CO., LTD. et al. (CN)
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