| Document |
Document Title |
|
WO/2015/065252A1 |
A nanolaminated magnetic multielement material (1 ) described by the formula Μn+1-δΑ1-αΧn-ρ, wherein n=1, 2, 3 or higher, δ ≤ 0.25, α ≤ 0.25, and p ≤ 0.25; A is at least one A-group element selected from a first group consi...
|
|
WO/2015/050369A1 |
Embodiments of the present invention relate to a magnetic sheet to be applied to a wireless charge module. Provided is a magnetic sheet which is compatible with the standards of various wireless power transmission methods, minimizes the ...
|
|
WO/2015/047194A1 |
A spin orbit torque-based spintronics device that includes a ferromagnet layer having a first surface and a second surface opposed to each other, a metal layer and a spacer layer covering the first surface and the second surface of the f...
|
|
WO/2015/039912A1 |
A self-referenced MRAM cell (1) comprises a first portion (2') of a magnetic tunnel junction (2) including a storage layer (23); a second portion (2") of the magnetic tunnel junction portion (2) including a tunnel barrier layer (22), a s...
|
|
WO/2015/022207A1 |
The invention relates to an inductive component comprising a stack of layers, said stack comprising layers based on magnetic ferrite, characterised in that: - the magnetic ferrite respects the chemical formula: NixMgyZnzCuvCowFe2-δO4 wh...
|
|
WO/2015/011050A1 |
The invention essentially relates to a voltage-controlled spintronic device comprising: - a magnetic layer having an effective anisotropy Keff; - a non-magnetic insulating layer; - a contact layer; said magnetic layer having an anisotrop...
|
|
WO/2014/207818A1 |
Provided is a spin wave guide which is compatible with an existing synchronous processing unit and for which power consumption is small, as well as a calculating circuit using same. A spin wave circuit is configured such that: upon a fer...
|
|
WO/2014/172224A1 |
A synthetic antiferromagnet (30) that may serve as a reference layer for a magnetic tunnel junction (MTJ) is disclosed and is a laminate with a plurality of "x+1" magnetic sub-layers (22a...22(x+1)) and "x" non-magnetic spacers (23a...23...
|
|
WO/2014/164925A1 |
Disclosed are devices and methods related to laminated polymeric planar magnetics. In some embodiments, a magnetic device can have a base layer including a polymeric laminate layer. The base layer can further include a set of one or more...
|
|
WO/2014/154497A1 |
The invention relates to a spin torque magnetic integrated circuit (1), comprising a shared free layer (2) with a magnetic anisotropy such as a shape anisotropy or a crystal anisotropy with at least two stable magnetic states disposed on...
|
|
WO/2014/142740A1 |
The present invention relates to using spin transfer torque underneath a nanocontact on a magnetic thin film with perpendicular magnetic anisotropy (PMA), provides generation of dissipative magnetic droplet solitons and report on their r...
|
|
WO/2014/091874A1 |
This magnetic material contains a structure in which a first magnetic layer (1) and a second magnetic layer (2) are alternately laminated, essentially as single atom layers, in at least one part in the direction of lamination. The first ...
|
|
WO/2014/086718A1 |
MRAM cell (1) comprising a magnetic tunnel junction (2) including a sense layer (21),a storage layer (23, 231),a tunnel barrier layer (22) and an antiferromagnetic layer (24) exchange-coupling the storage layer (23, 231) such that the st...
|
|
WO/2014/087749A1 |
The object of the present invention is to provide: a thermoelectric conversion element having flexibility and good thermoelectric conversion performance, and being able to be mounted on an uneven or curved surface; a method for manufactu...
|
|
WO/2014/085188A1 |
Synthetic antiferromagnetic (SAF) and synthetic ferrimagnetic (SyF) free layer structures are disclosed that reduce Ho (for a SAF free layer), increase perpendicular magnetic anisotropy (PMA), and provide higher thermal stability up to a...
|
|
WO/2014/082896A1 |
Magnetic element (1 ) comprising a first magnetic layer (21) having a first magnetization (210); a second magnetic layer (23) having a second magnetization (230); a tunnel barrier layer (22) comprised between the first and the second mag...
|
|
WO/2014/073798A1 |
The present invention relates to a spin transfer torque oscillator using an injection locking technique and, more particularly, to a spin torque-type injection locking oscillator that improves both output characteristics and noise charac...
|
|
WO/2014/054893A1 |
Provided is an electromagnetic booster for wireless charging, comprising a magnet part having a magnetic sheet (10) and a coil part (20) disposed on the magnetic sheet, wherein the magnetic sheet is composed of a first magnetic sheet (11...
|
|
WO/2014/038022A1 |
In order to provide an Nd-Fe-B thin film magnet exerting great magnetic coercive force and to provide a method for producing said Nd-Fe-B thin film magnet, an Nd-Fe-B layer is at least provided with an Nd2Fe14B phase and an Nd-rich phase...
|
|
WO/2014/036101A1 |
A magnetic thin film deposition is patterned and protected from oxidation during subsequent processes, such as bit line formation, by an oxidation-prevention encapsulation layer of SiN. The SiN layer is then itself protected during the p...
|
|
WO/2014/027636A1 |
Provided is a Fe-Co alloy sputtering target material that does not crack during sputtering. This Fe-Co alloy sputtering target material comprises a Fe-Co-M alloy represented by formula (1): (Fex-Co100-x)100-yMy (In the formula, the atomi...
|
|
WO/2014/027601A1 |
Provided is a soft magnetic alloy for magnetic recording purposes, in which the ratio 100Fe/(Fe + Co), expressed as an at.% ratio, is 0 to 70, and containing, expressed as at.%, (A) 10 to 30% of one or more elements selected from the gro...
|
|
WO/2014/022329A1 |
A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, ...
|
|
WO/2014/011950A1 |
A magnetic element in a spintronic device or serving as a propagation medium in a domain wall motion device is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, resp...
|
|
WO/2013/187217A1 |
A magnetic recording medium equipped with a magnetic recording layer, said magnetic recording layer comprising ferromagnetic parts and paramagnetic parts that are aligned in accordance with a definite rule, wherein: the ferromagnetic par...
|
|
WO/2013/181370A1 |
A ferromagnetic / ferroelectric heterostructure thin film is disclosed that exhibits significant magneto-electric coupling. The ferromagnetic / ferroelectric heterostructure thin film includes a) a base layer of silicon substrate, b) a f...
|
|
WO/2013/165167A1 |
Since the magnetic film (10) of the present invention has a much thinner thickness compared to a corresponding conventional magnetic layer and radiator coil material assembly and has no adhesive layer or air layer between the magnetic la...
|
|
WO/2013/156441A1 |
The invention relates to a method for filtering electrons, enabling a spin polarization of an electron current to be obtained at an at least 75% Fermi level, implemented by a spin-polarised current source (2) comprising: a polarized-spin...
|
|
WO/2013/156426A1 |
The invention relates to a method for producing a spin injector device (30), comprising the following steps: a) formation of a metal protection layer (22) on a surface (11) of a substrate (10) such as to limit or prevent the oxidation an...
|
|
WO/2013/153942A1 |
[Object] Provided is a magneto-resistance effect element that has high thermal stability in a recording layer which performs perpendicular magnetic recording in a film surface, and a magnetic memory using the magneto-resistance effect el...
|
|
WO/2013/145088A1 |
The purpose of the present invention is to provide the structure of a rare-earth magnet having high coercive force. This rare-earth magnet is characterized by comprising superposed layers composed of sheets (100) of an element bonded by ...
|
|
WO/2013/140677A1 |
Provided is a thin film or a laminate, which undergoes phase transition through mott transition at room temperature to exhibit a switching function. In one embodiment of the present invention, a perovskite-type manganese oxide thin film ...
|
|
WO/2013/139969A1 |
The invention relates to a magnetic multilayer system (1) that is arranged on a substrate (6) which is made of a material from the group consisting of a plastic of the polymer group, metal, metal alloy, and paper and/or which is at least...
|
|
WO/2013/141337A1 |
Provided are an element structure in which a magnetic layer has a high magnetic anisotropic constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC me...
|
|
WO/2013/131510A1 |
The invention relates to a spin valve for use in MRAM memory units, said spin valve consisting of two layers which are magnetized perpendicularly to the layer plane and which are separated by an intermediate layer. The reference layer is...
|
|
WO/2013/119046A1 |
Disclosed is a display device using magnetic particles. The display method using magnetic particles according to the present invention includes: (a) applying a first magnetic field to a plurality of particles in a state where the plurali...
|
|
WO/2013/103132A1 |
Provided is a nanocomposite magnet having high coercive force and residual magnetization and improved maximum energy product, which is characterized in that a non-ferromagnetic phase is provided in between a hard magnetic phase having a ...
|
|
WO/2013/097015A1 |
The present invention relates to a vitreous material characterized by the ability to grow, in a controlled manner, nanostructured films on the surface thereof, on the basis of compounds of typically metallic elements included as dopants ...
|
|
WO/2013/082685A1 |
Thin ferromagnetic material. This invention patent relates to a ferromagnet consisting of a thin carbon film containing layers (1) of carbon chemically bonded to high-density polyethylene (2), the latter generating the unpaired electric ...
|
|
WO/2013/080482A1 |
A storage element includes a magnetization fixed layer, and a magnetization free layer. The magnetization fixed layer includes a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjac...
|
|
WO/2013/065531A1 |
When a magnetic film on a substrate is etched by reactive ion beam etching during the production of a magnetic device, generation of particles and deterioration in process reproducibility, which are caused by a large amount of a carbon p...
|
|
WO/2013/062617A1 |
A memory element is provided that includes a ferromagnetic (FM) layer having one or more ferromagnetic materials. One or more first molecule layers are positioned on the FM layer where charge transfer and interface chemistry between the ...
|
|
WO/2013/063467A1 |
Forming a ferrite thin film laminate includes heating a layered assembly to form a laminate. The layered assembly includes a first coated substrate having a first ferrite layer opposite a first thermoplastic surface and a second coated s...
|
|
WO/2013/051612A1 |
The present invention is a laminate that comprises: a base film (12) which is a crystal having a wurtzite structure; and an MgXM1-XO film (14) which is formed on the base film and has a hexagonal structure, and wherein M is a 3d transiti...
|
|
WO/2013/038281A1 |
An antiferromagnetic nanostructure according to one embodiment includes an array of at least two antiferromagnetically coupled magnetic atoms having at least two magnetic states that are stable for at least one picosecond even in the abs...
|
|
WO/2013/020569A1 |
A magnetoresistive memory element comprising a magnetic tunnel junction or magnetic multilayer exhibiting giant magnetoresistance with a free magnetic layer made of a material that is prone to a spin reorientation transition driven by la...
|
|
WO/2013/011971A1 |
A magnetic substance element according to the present invention is configured from a layered body in which a magnetic insulation film is formed upon a substrate which does not have a crystalline structure. The magnetic insulation film ha...
|
|
WO/2013/002624A1 |
The invention relates to a method for synthesising a diluted magnetic oxide (DMO) from a matrix consisting of a non-magnetic metal oxide. The invention is characterised in that said matrix is doped with at least one metal, the type and c...
|
|
WO/2012/141643A1 |
A spin-filter for detection of angular momentum of electrons, wherein the spin-filter (1) comprises a substrate (10), provided with at least one membrane layer (12) having a first surface (11) and having a plurality of membranes (12n) co...
|
|
WO/2012/117212A2 |
The invention relates to a magnetic device comprising at least one memory point (1) comprising: a reference layer (2) having a variable magnetising direction; a storage layer (3) having a variable magnetising direction; a spacer (4) betw...
|
