| Document |
Document Title |
|
WO/2006/134952A1 |
The invention provides a perpendicular magnetic recording medium for use in a hard disk drive or a similar apparatus, a method for producing the perpendicular magnetic recording medium, and a magnetic recording and reproducing apparatus....
|
|
WO/2006/135034A1 |
The invention provides a magnetic recording medium, and a magnetic recording and reproducing apparatus. The magnetic recording medium includes a substrate 11, an under layer 12 formed on the substrate 11, a magnetic recording layer 13 fo...
|
|
WO/2006/129576A1 |
A magnetoresistive element comprises a magnetization fixed layer, a magnetization free layer, and a barrier layer (14) arranged between the magnetization fixed layer and the magnetization free layer. The magnetization free layer comprise...
|
|
WO/2006/112119A1 |
A ferromagnetic dual tunnel junction element (10) which can provide at least 100% of TMR effect at room temperature and is small in TMR lowering due to a bias voltage, and which comprises, laminated sequentially on a substrate (2), a fir...
|
|
WO/2006/112468A1 |
An electromagnetic interference preventing component (18) has a high-frequency high-permeability magnetic film in which the real number component (μ') of the permeability at a transmission band frequency of an electronic device (10) inc...
|
|
WO/2006/109615A1 |
This invention provides a stacked permanent magnet, which can hold magnetization reversal of an alloy magnetic layer by strong demagnetization of superimposed large demagnetizing fields and can generate large surface magnetic flux densit...
|
|
WO/2006/107068A1 |
The invention provides a perpendicular recording medium with high recording density, and a magnetic recording and reproducing apparatus, by improving the function of magnetic anisotropy of a soft magnetic underlayer. The perpendicular re...
|
|
WO/2006/106638A1 |
In an oxide magnetic thin-film, the particle diameter is controlled on a nano-level. In the forming of an oxide magnetic thin-film on a substrate by sputtering, the diameter of oxide magnetic particles is controlled on a nano-level by co...
|
|
WO/2006/100968A1 |
A film is formed at a high rate on the surface of an iron-boron-rare-earth-metal magnet having a given shape, while effectively using dysprosium or terbium as a film-forming material. Thus, productivity is improved and a permanent magnet...
|
|
WO/2006/099809A1 |
A core composite film for magnetic/nonmagnetic/magnetic multilayer thin film comprises a free magnetic layer, a barrier layer and a pinned magnetic layer. As the core composite film, it may be only the barrier layer is an LB film which i...
|
|
WO/2006/098432A1 |
A magnetic semiconductor material, characteristic in that it comprises at least one type of a transition metal ion (Mn2+, Fe3+,Ru3+,Re2+ or Os3+) having five electrons in the d atomic orbital thereof as a magnetic ion, and exhibits the n...
|
|
WO/2006/090496A1 |
A ferromagnetic conductor material which is represented by the chemical formula (1) M(A-x)M’xOy ··· (1) [wherein x represents a number in the range of 0 < x ≤ 0.8 and x < A, A and y are constants depending on the type of M, M’is...
|
|
WO/2006/082948A1 |
Perpendicular magnetic recording media enabling high-density recording and reproduction of information, as well as a production process thereof, and a magnetic recording and reproducing apparatus, are provided. Perpendicular magnetic rec...
|
|
WO/2006/064937A1 |
A process for producing a nanocomposite magnet, characterized in that in the production of a nanocomposite magnet composed substantially of a hard magnetic phase having the composition of Sm(Co,Cu)5 and a soft magnetic phase of Fe to Fe1...
|
|
WO/2006/057379A1 |
[PROBLEMS] To provide a thin film magnetic resistor element having high magnetic field sensitivity and excellent linearity, to provide a method for manufacturing the thin film magnetic resistor element at low cost and easily, and to prov...
|
|
WO/2006/054469A1 |
A ferromagnetic film which comprises a ferromagnetic element and a non-magnetic element and has a first portion and a second portion, wherein the first portion has a concentration of a non-magnetic element lower than the average concentr...
|
|
WO/2006/044031A1 |
A material stack (50) has an electrical resistance generally the same in the presence of a magnetic field and in the presence of no magnetic field. The electrical resistance of the material stack (50) has a temperature coefficient genera...
|
|
WO/2006/038630A1 |
Disclosed is a magnetic recording medium having a recording layer composed of a ferromagnetic material represented by the following general formula: [(Co1-mPtm)1-nCrn]100-x-yTixOy (wherein m and n respectively represent an atomic ratio, ...
|
|
WO/2006/034673A1 |
The invention relates to a magnetic layer system comprising two magnetizable layers FM1 and FM2 with at least one non-magnetizable layer placed therebetween, to a magnetic storage system comprising write and/or read heads, to hard disks ...
|
|
WO/2006/035342A1 |
A magnetic sensor has a magnet (30) and a magneto-resistive element (20), arranged on a substrate such that magnetic field lines through the magneto-resistive element are substantially parallel to a plane of the substrate. Movement of a ...
|
|
WO/2006/028101A1 |
Disclosed is a spintronics material containing X2(Mn1-yCry)Z. In this connection, X represents at least one element selected from the group consisting of Fe, Ru, Os, Co and Rh, Z represents at least one element selected from the group co...
|
|
WO/2006/025413A1 |
There are provided a memory and its manufacturing method based on a new operation principle and capable of improving the cost, service life, energy consumption, and recording density as compared to a conventional optical disc and hard di...
|
|
WO/2006/008939A1 |
An inductance component is composed of a coil (1), and a multilayer magnetic layer (2) wherein a first metal layer (4), a first metal magnetic layer (5), an intermediate layer (6) including a cupper oxide, and a second metal magnetic lay...
|
|
WO/2006/006630A1 |
A method for manufacturing a magnetoresistive device comprises a step for forming an antiferromagnetic layer on the upper surface of a substrate, a step for forming a first fixed ferromagnetic layer on the antiferromagnetic layer on the ...
|
|
WO/2006/006420A1 |
A magnetoresistance effect device comprising an antiferromagnetic layer, a fixed ferromagnetic layer, a first nonmagnetic layer and a free ferromagnetic layer. The antiferromagnetic layer is formed on an upper surface side of base sheet....
|
|
WO/2006/003922A1 |
A perpendicular magnetic recording disk that is capable of contributing to realization of high recording density through enhancement of the S/N ratio at high-density recording while avoiding any increase of DC noise, deterioration of the...
|
|
WO/2006/003639A1 |
A tunnel magnetoresistance (TMR) device (1) is provided. Illustrated only are the ancillary layers of such a device which comprises a film laminate having two electrode layers (2, 3) separated by a thin dielectric layer (4) for reception...
|
|
WO/2005/117128A1 |
The invention provides a magnetic tunnel junction having a tunneling barrier layer wherein said tunneling barrier layer comprises a diluted magnetic semiconductor with spin sensitivity. The magnetic tunnel junction may according to the i...
|
|
WO/2005/115531A2 |
A composition containing nanomagnetic particles. The nanomagnetic particles have an average particle size of less than about 100 nanometers, a saturation magnetization of from about 2 to about 2,000 electromagnetic units per cubic centim...
|
|
WO/2005/117512A1 |
A shielded assembly containing a substrate and a shield. The shield contains both nonmagnetic material and a material with an electrical resistivity of from about 1 microohm-centimeter to about 1 x 1025 microohm centimeters. The nanomagn...
|
|
WO/2005/114683A1 |
The invention relates to a magnetisable composition and a magnetic material comprising a coordination polymer with a number of polymeric components with a polytopic ligand and a metal ion, whereby the polymer components may be the same o...
|
|
WO/2005/112086A1 |
A semi-conducting material being a non-oxide material or an already doped oxide material, wherein said material is doped with Manganese, Mn, and is ferromagnetic at least at one temperature in the range between room temperature and 500 K...
|
|
WO/2005/110217A1 |
An assembly for shielding an implanted medical device form the effects of high-frequency radiation and for emitting magnetic resonance signals during magnetic resonance imaging. The assembly includes an implanted medical device and a mag...
|
|
WO/2005/112085A1 |
A semi-conducting material, a method for producing the material, and ways of implementing the material, wherein said material is doped with Cu or CuO, and is ferromagnetic at least at one temperature in the range between -55°C and 125°...
|
|
WO/2005/109454A1 |
A semiconductor magnetic body comprises a layer (11 15) intended to trap electrons, wherein said layer (11 15) is surrounded on both sides by a magnetic layer (16, 17). This leads to the creation of ferromagnetic character in spatially...
|
|
WO/2005/109517A2 |
A spin-valve structure is provided, illustrating the layer structure used for the magnetic tunnel junction, by a method comprising the steps of providing a substrate, growing a ferromagnetic layer on the substrate, growing a tunnel barri...
|
|
WO/2005/104240A1 |
The present invention is directed to a magneto-electric field effect transistor comprising a channel region, a source connected to one side of the channel region and adapted to inject electrons into the channel region, a drain connected ...
|
|
WO/2005/101376A1 |
A magnetoresistive read head includes a spin valve having at least one free layer spaced apart from at least on pinned layer by a spacer. The pinned layer is highly resistive and includes a Co¿100-x?Fe¿x? layer used in at least a part ...
|
|
WO/2005/101941A1 |
An electromagnetic wave absorber comprising (a) soft ferrite having its surface treated with a silane compound having no functional group, (c) magnetite and (d) silicone, or comprising (a) soft ferrite having its surface treated with a s...
|
|
WO/2005/098953A1 |
There is provided a magnetization direction control method for controlling the magnetization direction of first to third ferromagnetic layers (11 to 13) of a layered ferrimagnetic structure (10A) having the first to the third ferromagnet...
|
|
WO/2005/098095A1 |
A method which comprises a step of carrying out a molten salt electrolysis in an electrolytic bath, wherein at least one metal compound selected from the group consisting of actinoid compounds and rare earth compounds is molten, by the u...
|
|
WO/2005/093124A1 |
A Co-Cr-Pt-B based alloy sputtering target, characterized in that it has a rolled structure of an island form comprising a Co-rich phase being based on a primary crystal in casting; and the Co-Cr-Pt-B based alloy sputtering target wherei...
|
|
WO/2005/093719A1 |
The magnetic recording medium of the present invention has a substrate, a perpendicular magnetic recording layer, and a soft magnetic layer formed therebetween, having a thickness of less than 100 nm, the soft magnetic layer having a mag...
|
|
WO/2005/091315A1 |
An R-Fe-B based thin film magnet which comprises an R-Fe-B based alloy containing 28 to 45 mass % of an R element (wherein R represents one or more of rare earth lanthanide elements) and is formed into a film by a physical means, wherein...
|
|
WO/2005/089105A2 |
A shielded medical device implanted in a biological organism. The device has a magnetic shield, and the magnetic shield contains a layer of nanomagnetic material; such layer has a morphological density of at least 98 percent; and it is b...
|
|
WO/2005/088655A1 |
A magnetoresistive medium (1) comprises a substrate (2) which has been treated to provide a miscut vicinal surface (3) in the form of terraces (4) and steps (5) of atomic scale. There are discrete separated spacer nanowires (7) provided ...
|
|
WO/2005/088745A1 |
A single crystal MgO(001) substrate (11) is prepared. An epitaxial Fe(001) lower electrode (first electrode) (17) having a thickness of 50 nm is deposited on an MgO(001) seed layer (15) at room temperature. In an ultrahigh vacuum (2×10-...
|
|
WO/2005/086556A1 |
An electromagnetic noise absorbing thin film, characterized in that it comprises an electrically insulating inorganic base material comprising an oxide, a nitride, a fluoride or a mixture thereof and, embeded therein, a columnar structur...
|
|
WO/2005/086184A1 |
An electromagnetic noise suppressing thin film has a structure wherein a column-shaped structure composed of a pure metal of Fe or Co or Ni or an alloy containing such metals at least 20 wt% is buried in an inorganic insulating base mate...
|
|
WO/2005/086250A1 |
Disclosed is a tunnel junction device capable of controlling spin retention. Specifically disclosed is a tunnel junction device having a structure wherein an LaAlO3-&dgr (electrically insulating layer) (13) as a ferromagnetic (including ...
|
