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WO/2009/038032A1 |
A variable resistance element is provided with a first electrode (12); a metal oxide layer (13) brought into contact with the first electrode (12); an interface oxidation layer (14) brought into contact with the metal oxide layer (13); a...
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WO/2009/033279A1 |
A thin film electro-luminescent device (TFEL) includes an active layer made of a direct bandgap semiconductor material, e.g. zinc oxide, doped with exciton binding centers, such as aluminum, in small amounts, e.g. 0.001 at% to 30.0 at%. ...
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WO/2009/027826A2 |
Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventipnal gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of ...
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WO/2009/028250A1 |
Recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase transformation of a crystallized state and an amorphous state of a recording material which is a Te-...
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WO/2009/028249A1 |
Recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase transformation of a crystallized state and an amorphous state of a recording material which is a Te-...
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WO/2009/025037A1 |
[PROBLEMS] To provide a resistance variable element which is capable of bipolar operation under a predetermined principle of operation and can be used as a storage element. [MEANS FOR SOLVING PROBLEMS] The resistance variable element (X1...
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WO/2009/022693A1 |
Provided is a method for driving a storage device which can improve reliability of data write-in in a storage device including a variable resistance element. When writing data, write-in pulses of different shapes are applied between two ...
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WO/2009/020210A1 |
A fine switching element is provided with a first electrode (4), which includes an ion conductor, and a second electrode (5) composed of an electrical conductor. The switching element physically and electrically connects the first electr...
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WO/2009/020041A1 |
This invention provides a resistance variation-type memory device which can improve the capability of retaining the resistance value of a stored state and an erased state. A memory layer (5) comprising a high-resistance layer (2) and an ...
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WO/2009/003056A2 |
A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nano...
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WO/2008/153006A1 |
An information recording/reproducing device is provided with a recording layer, and a means for recording information by generating phase change in the recording layer by applying a voltage to the recoding layer. The recording layer cont...
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WO/2008/153099A1 |
This invention provides an information recording/reproducing device comprising a laminated structure having an electrode layer and a recording layer, a buffer layer added to the electrode layer, and a voltage application part for applyin...
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WO/2008/152908A1 |
To provide a neuron element and a neural network information processing apparatus using the same. The neuron element (1) comprises an input part (10) that receives a plurality of input signals (xi) to generate weighted signals (xiwi) obt...
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WO/2008/149605A1 |
Disclosed is a variable resistance element comprising a first electrode, a variable resistance material layer formed on the first electrode, and a second electrode formed on the variable resistance material layer. The variable resistance...
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WO/2008/149808A1 |
A switch circuit is provided with a plurality of switch elements. Each switch element has two metal layers and a resistance variable layer arranged between the metal layers by being brought into contact with the metal layers. The switch ...
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WO/2008/149484A1 |
A nonvolatile storage element is provided with a first electrode layer (103), a second electrode layer (107), and a resistance change layer (106) that is interposed between the first electrode layer (103) and the second electrode layer (...
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WO/2008/146461A1 |
Disclosed is a nonvolatile semiconductor device comprising a first electrode (103), a second electrode (105) and a variable resistance layer (104) arranged between the first electrode (103) and the second electrode (105) and having a res...
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WO/2008/142919A1 |
Provided is a variable resistive element which performs high speed and low power consumption operation. In the variable resistive element, a metal oxide layer (10) is provided between a first electrode (11) and a second electrode (12), a...
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WO/2008/132899A1 |
In order to use a resistance change element having an MIM laminate structure of metal/metal oxide/metal as a switch element, an off resistance larger than that required for a memory element by a factor of 1000 or more must be achieved. I...
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WO/2008/126366A1 |
Disclosed is a variable resistance element comprising a first electrode (2), a second electrode (4), and a variable resistance layer (3) which is arranged between the first electrode and the second electrode and electrically connected wi...
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WO/2008/126365A1 |
A nonvolatile memory device comprises a first electrode (111), a second electrode (112), and a variable resistance layer (113) which is interposed between the electrodes and the resistance value of which is reversibly changed between res...
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WO/2008/123139A1 |
Disclosed is a resistance memory element which has a relatively high switching voltage and can achieve a relatively high change ratio in resistance. The resistance memory element comprises a base material (2) and opposite electrodes (3,4...
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WO/2008/123307A1 |
A nonvolatile information recorder/reproducer of low power consumption exhibiting high thermal stability. The information recorder/reproducer comprises a recording layer, and a means for recording information by applying a voltage to the...
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WO/2008/117679A1 |
A variable resistance element is provided with a first electrically conductive unit, an insulating film pattern formed on the first electrically conductive unit, a step formed by the insulating film pattern against the upper surface of t...
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WO/2008/117494A1 |
Storage elements (3) provided in a storage device (21) in matrices comprise resistance change elements (1) the electrical resistance values of which are changed by application of an electrical pulse having a positive or negative polarity...
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WO/2008/102718A1 |
Provided is a semiconductor memory device comprising a resistance-varying element including a first electrode, a current passage region disposed to contact the first electrode, and a second electrode disposed to contact the current passa...
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WO/2008/081742A1 |
A resistance variable element (10), a resistance variable storage device and a resistance variable device are provided with a first electrode(2); a second electrode (4); and a resistance variable layer (3), which is arranged between the ...
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WO/2008/081741A1 |
A resistance variable element and a resistance variable storage device using such resistance variable element are provided with a first electrode; a second electrode; and a resistance variable layer (3), which is arranged between the fir...
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WO/2008/068991A1 |
Provided is a nonvolatile semiconductor memory device capable of executing rewriting operations of different resistance changes individually and simultaneously for a plurality of memory cells having variable resistance elements changed i...
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WO/2008/068992A1 |
Provided is a nonvolatile semiconductor storage device, which is enabled to perform a stable, high-speed switching operation on variable resistance elements by applying a voltage of a positive or negative polarity with no difference in t...
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WO/2008/062623A1 |
Provided is an element structure by which operating voltage variance and a leak current in an off-state are reduced in a resistance variable type nonvolatile storage device. The nonvolatile storage device is characterized in having a lam...
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WO/2008/047770A1 |
[PROBLEMS] To provide a resistance variable element which can perform bipolar operation in prescribed operating principles and can be used as a storage element. [MEANS FOR SOLVING PROBLEMS] A resistance variable element is provided with ...
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WO/2008/047928A1 |
It is an object to provide an element structure in which defects are not easily generated and a semiconductor device that has the element. An element has a structure in which a layer containing an organic compound is interposed between a...
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WO/2008/046058A2 |
A transparent conductor including a conductive layer coated on a substrate is described. More specifically, the conductive layer comprises a network of nanowires that may be embedded in a matrix. The conductive layer is optically clear, ...
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WO/2008/035432A1 |
[PROBLEMS] To provide a semiconductor storage device wherein memory cells can be formed both in a simple structure and in a higher density. [MEANS FOR SOLVING PROBLEMS] The drain (18) of the selecting transistor (14) of each of memory ce...
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WO2008009105B1 |
A thin film transistor (TFT) array having test circuitry includes a thin film transistor array body having a plurality of pixels. Test circuitry is integrally formed with the body. The test circuitry includes a power supply for supplying...
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WO/2008/023637A1 |
A storage element is provided with a first electrode, a second electrode, and a resistance changing film (2) which is arranged between the first electrode and the second electrode to be connected with the both electrodes and changes a re...
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WO/2008/021073A2 |
The present invention provides devices and methods for making nano structures such a nanoheater. In one embodiment, the nanoheater element comprises a first reactive member and interlayer disposed in communication with at least a portion...
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WO/2008/017733A1 |
An ion beam etching method for processing three dimensional nanostructures, wherein a pre-fabricated nanostructure (12) formed on a substrate (8) is etched three dimensionally by bombarding the nanostructure in vacuum conditions by a bea...
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WO/2008/007481A1 |
Disclosed is a resistive memory device which has a relative high switching voltage and can achieve a relatively high resistance change ratio. The resistive memory device comprises an element (2) and counter electrodes (3,4) which are opp...
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WO/2008/001712A1 |
Typically provided is a switching element comprising a first insulating layer (1003) having an opening and made of a material for preventing the diffusion of metal ions, a first electrode (104) formed in the opening and containing a mate...
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WO/2008/000425A1 |
The invention relates to a method for producing a transponder (1) comprising an integrated circuit (2) for storing and/or processing data. According to the method of the invention, a cuboid support (3) having six faces (4, 5, 6, 7, 8, 9)...
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WO/2007/143852A1 |
A fabrication method is described for forming an electronic circuit on a flexible substrate consisting of plastic and opaque foils. Corresponding circuit structures are also described herein. The opaque substrate can be selected from a s...
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WO/2007/138646A1 |
A nonvolatile memory element is formed by a variable-resistance section and MISFET for memory selection connected in series to the variable-resistance section. The variable-resistance section includes: a thin film (tantalum pentoxide fil...
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WO/2007/131343A1 |
A low temperature method and system configuration for depositing a doped silicon layer on a silicon substrate of a selected grade. The silicon substrate for functioning as a light absorber and the doped silicon layer for functioning as a...
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WO/2007/125674A1 |
Provided are a variable resistance element having a constitution, in which the area of an electrically contributable region of a variable resistor is smaller than the area defined by an upper electrode or a lower electrode, and a method ...
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WO/2007/126384A2 |
The present invention relates to a solid state cooling/power generating device is provided comprising a first and second electrode separated by a vacuum gap. According to the present invention at least one of the electrodes is provided w...
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WO/2007/116749A1 |
A nonvolatile memory element comprises a first electrode (2), a second electrode (6) formed above the first electrode (2), a variable resistive film (4) which is formed between the first electrode (2) and the second electrode (6) and who...
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WO/2007/114099A1 |
Disclosed is a switching device which is operated by utilizing an electrochemical reaction and comprises an ion conductive layer (54) which is capable of conducting metal ions, a first electrode (49) formed in contact with the ion conduc...
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WO/2007/112925A1 |
The invention relates to a THz antenna array (20, 30, 40, 50) comprising a plurality of THz antennae (29, 39, 49, 49', 49' '), a THz antenna (29, 39, 49, 49', 49' ') having a photoconductive region (22, 32, 42) and a first electrode (21A...
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