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WO/1999/049525A1 |
The invention concerns optically absorptive photonic devices and in particular photovoltaic and photoconductive devices. It is particularly concerned with devices formed from multiple semiconducting layers, e.g. organic semiconducting po...
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WO/1999/039372A2 |
Image sensors with monochromatic or multi-color response made from organic semiconductors are disclosed. The image sensors are comprised of image sensing elements (pixels) each of which comprises a thin layer (or multiple layers) of orga...
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WO/1999/039394A1 |
The present invention relates generally to fabricating two-terminal electric microswitches comprising thin semiconductor films and using these microswitches to construct column-row (x-y) addressable microswitch matrices. These microswitc...
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WO/1999/028959A1 |
A method of forming a fine protuberance structure equipped with a semiconductor substrate and fine protuberances comprising a semiconductor-metal solid solution, comprising arranging fine metal particles on the semiconductor substrate, f...
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WO/1999/008327A1 |
The invention relates to a component having a rectifying function, fulfilled by means of charge transfer by ions. To this end, the component is composed of multiple layers which have, successively, an asymmetric energy level course, and ...
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WO/1999/004440A1 |
A microelectronic network is fabricated on a fibrous skeleton by binding or complexing electronically functional substances to the nucleic acid skeleton. The skeleton comprises fibers with nucleotide chains. The assembly of the fibers in...
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WO/1999/000991A1 |
Thin film AMA actuated mirror array is disclosed. The thin film AMA has an active matrix, a supporting member (175), an actuator (210), and a reflecting member (260). The actuator (210) has a bottom electrode (180), two active layers (19...
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WO/1999/000695A1 |
An active matrix LCD employs a two-terminal or three-terminal switch structure employing an electrically conductive wire. The wire has an insulating layer thereon forming a wire structure. The wire structure is placed in a groove in a tr...
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WO/1998/053841A1 |
A method for forming arrays of metal, alloy, semiconductor or magnetic clusters is described. The method comprises placing a scaffold on a substrate, the scaffold comprising molecules selected from the group consisting of polynucleotides...
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WO/1998/021754A1 |
Subject of this invention is multilayer ZnO polycrystalline diode. Diode is made of multicomponent material, where the basis is zinc oxide (ZnO), which is semiconductor of type N, over 90 % (weight percent) included in mentioned multicom...
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WO/1997/038810A1 |
The invention relates to a method of manufacturing a sintered structure on a substrate. To this end, a particle-charged liquid is provided on the substrate by means of a (multiple print head) ink jet printer. Subsequently, the liquid is ...
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WO/1997/036333A1 |
The tunnelling device comprises input (3), output (4) and control (N) electrodes separated by tunnel barriers; the tunnel barriers and inter-barrier spaces take the form of a sequenced structure of molecules and clusters forming tunnel j...
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WO/1997/022140A2 |
An accelerometer is fabricated by forming a proofmass and at least one associated hinge in a silicon substrate through a variety of etching and bonding processes. The processes entail ion implantation and formation of an oxide support la...
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WO/1996/041368A1 |
This invention relates to the area of microelectromechanical systems in which electronic circuits and mechanical devices are integrated on the same silicon chip. The method taught herein allows the fabrication of thin film structures (2)...
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WO/1996/028841A1 |
The invention relates to a method for manufacturing a micromachined structure to be at least partly released from a substrate surface. A surface contact area, over which structure and the said substrate surface are in surface contact wit...
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WO/1995/026567A1 |
A method for fabricating a connecting spring member (24) of an arbitrary shape extending between a central mass (21) and an outer support frame (23) of a sensor as shown in Figure 7 is disclosed. Each of a pair of generally identical sil...
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WO/1995/024736A1 |
The invention relates to the area of microelectromechanical systems in which electronic circuits and mechanical devices are integrated on the same silicon chip. The method taught herein allows the fabrication of thin film structures (20)...
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WO/1995/016192A1 |
A method of producing sealed cavity structures in the surface layer of a selectively etchable substrate (1), comprises: a) depositing a masking layer (2) of etchable material on the substrate (1), b) by means of etching, opening at least...
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WO/1995/009366A1 |
A micromechanical device has a micromechanical region on a carrier or substrate (1, 10). The micromechanical region is covered on the chip by a flat covering (D) arranged on the carrier. In a process for producing such a micromechanical ...
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WO/1994/027308A1 |
A bi-stable memory element (1) comprises a base contact (3), and a bridging contact (8), both made from an electrically conductive material. The bridging contact (8) is dimensioned so as to have two stable positions, in one of which the ...
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WO/1994/018433A1 |
A microminiature Stirling cycle engine or cooler is formed utilizing semiconductor, planar processing techniques. Such a Stirling cycle thermomechanical transducer has silicon end plates (14, 22) and an intermediate regenerator (50). The...
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WO/1993/024957A1 |
A highly integrated low-power neuron computer chip which is of practical performance level and with a small power consumption can be realized. The synapse coupling can be made by a small number of elements, and the synapse weighting valu...
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WO/1992/015872A1 |
The limiting-current probe proposed has a fixed-ion conductor (1) fitted with electrodes (2, 3) on two opposite faces. By fixing its porosity, the fixed-ion conductor not only fulfils its function as an ion-conducting medium but also act...
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WO/1992/002046A1 |
A method of manufacturing a semiconductor device including a process of forming a connection hole which connects either one of the electrodes so formed as to sandwich a ferroelectric layer between them with a diffusion layer having a hig...
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WO/1989/009933A1 |
A planar polarographic probe for determining the lambda value of gaseous mixtures, in particular exhaust fumes from internal combustion engines, has at least the following units: a pump cell (A), a diffusion unit (B) with a diffusion res...
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WO/1989/009496A1 |
A new type of electrically resistive material for thin-layer thermotransducers, in particular for printing heads of thermal printers, is produced by cathodic sputtering of suitable targets, and consists of four or five components includi...
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WO/1989/008840A1 |
The sensor element disclosed comprises at least one outer and one inner pump electrode on an O2- ion-conducting solid electrode in the form of a small plate or a film. The inner pump electrode is arranged in a diffusion channel for the t...
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JP2022554106A |
An electrochemical device includes an electrochemical cell and an electrical circuit. The electrochemical cell includes a first solid state component and a second solid state component. The two solid components contain the same chemical ...
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JP7197866B2 |
Provided is a memristor that can be manufactured at a low temperature, and does not include metals of which resources might be depleted. This memristor includes a first electrode, a second electrode, and a memristor layer of an oxide hav...
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JP2022189332A |
To provide a storage device with an improved operation speed.A storage device 10 comprises: a word line 20; a bit line 30; a phase change layer 40 arranged between the word line 20 and the bit line 30 and being possible to reversibly mak...
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JP7194485B2 |
A method is presented for forming a semiconductor device. The method includes depositing an insulating layer over a semiconductor substrate, etching the insulating layer to form a plurality of trenches for receiving a first conducting ma...
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JP2022189117A |
To optimize current passed to a resistance change element.According to an embodiment, in a non-volatile semiconductor storage device, a cell block comprises a plurality of memory cells and a selection transistor. The plurality of memory ...
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JP2022189331A |
To provide a storage device capable of operating on a lower current than ever before.A storage device 10 comprises a phase change layer 40 containing tellurium and a diffusion layer 50 arranged in a position adjacent to the phase change ...
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JP2022185856A |
To provide a semiconductor storage device capable of increasing a heating temperature in a memory cell, improving locality of a heat generation position, and reducing disturbance (data corruption) to an adjacent memory cell.A semiconduct...
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JP2022181756A |
To provide a semiconductor storage device capable of achieving lower power and higher integration.A non-volatile semiconductor memory 100 includes a memory cell array 110 in which a NOR-type array 110A having a NOR-type flash memory stru...
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JP7165976B2 |
To stabilize programming operation and to reduce leakage current. A variable resistance element according to the present invention is provided with: an interlayer insulating film; a first electrode that is formed within the interlayer in...
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JP2022544497A |
Methods, systems, and devices for techniques for forming self-aligned memory structures are described. Aspects include a layered assembly of materials including a first conductive material and a first sacrificial material to form a first...
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JP7155752B2 |
A resistance change device includes a first resistance change layer that occludes and discharges ions of at least one type, and resistance of the first resistance change layer, changes in accordance with an amount of the ions in such a m...
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JP2022152035A |
To provide a memory cell capable of achieving multilevel storage with a simple configuration and at low cost, and a storage method using the same.A memory cell includes a first electrode layer and a second electrode layer, and a solid el...
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JP2022542744A |
A method for controlling the forming voltage of a dielectric film in a resistive random access memory (ReRAM) device. The method includes depositing a dielectric film containing intrinsic defects on a substrate, forming a plasma-enhanced...
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JP2022147118A |
To provide a nonvolatile storage device capable of reducing a leakage current flowing in a switch layer, stabilizing information reading operation, and realizing an increased storage capacity.A nonvolatile storage device includes a first...
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JP2022147390A |
To provide a storage device including a resistance change memory element having excellent performance.A storage device according to an embodiment includes a resistance change memory element 140 including a first electrode 141, a second e...
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JP2022146047A |
To provide a selector device capable of enhancing the heat confinement effect of a selector layer and improving the characteristics.A selector device 1 according to an embodiment includes a first electrode 2, a second electrode 3, and a ...
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JP2022144045A |
To provide a selector device with an improved cycle characteristic.A selector device 1 according to this embodiment includes a first electrode 2, a second electrode 3, a selector layer 4 disposed between the first electrode 2 and the sec...
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JP7145495B2 |
To achieve both functions of a memory element and a selector element in a laminated structure of amorphous oxides arranged between a first metal electrode and a second metal electrode.A nonvolatile memory element 10 according to the pres...
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JP2022142228A |
To provide a semiconductor storage device with improved durability.A semiconductor storage device configured as a non-volatile storage device which uses a ferroelectric layer comprises a channel layer 120 containing titanium oxide. an el...
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JP2022142627A |
To provide a semiconductor storage device capable of suppressing a reset current.A semiconductor storage device according to an embodiment includes an electrode made of a first material, further includes a memory material made of a secon...
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JP2022541886A |
Embodiments of the present invention relate to forming substoichiometric metal oxide films using a modified atomic layer deposition (ALD) process. In a non-limiting embodiment of the invention, a first precursor and a second precursor ar...
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JP7140476B2 |
An aluminum compound is represented by Chemical Formula (I) and is used as a source material for forming an aluminum-containing thin film.
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JP7138722B2 |
Methods and apparatuses for a cross-point memory array and related fabrication techniques are described. The fabrication techniques described herein may facilitate concurrently building two or more decks of memory cells disposed in a cro...
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