| Document |
Document Title |
|
JP2022019454A |
To provide a semiconductor device capable of improving an operation margin.A semiconductor device according to one embodiment of the present disclosure has: a plurality of first selection lines which extend in a first direction and a plu...
|
|
JP7010843B2 |
A semiconductor solid state battery has an insulating layer provided between an N-type semiconductor and a P-type semiconductor. The first insulating layer preferably has a thickness of 3 nm to 30 μm and a dielectric constant of 10 or l...
|
|
JP2022016406A |
To provide a semiconductor structure with an embedded memory device and its formation method that improves the overall reliability and performance of an IC by improving the reliability and yield of the embedded RRAM structure.A semicondu...
|
|
JP6995131B2 |
A technique relates a resistive processing unit (RPU) array. A set of conductive column wires are configured to form cross-points at intersections between the set of conductive row wires and a set of conductive column wires. Two-terminal...
|
|
JP6985431B2 |
Provide a resistive random-access memory device having an optimized 3D construction. A resistive random-access memory includes a plurality of pillars, a plurality of bit lines, and a memory cell. The pillars extend vertically along the m...
|
|
JP6976317B2 |
The invention relates to a supercapacitor comprising:an electrolyte having a first end and a second end opposite the first end,a first electrode in contact with the first end of the electrolyte, anda second electrode in contact with the ...
|
|
JP6977929B2 |
To provide a semiconductor solid battery which is suppressed in voltage drop.Provided is a semiconductor solid battery having a structure in which a first insulation layer is provided between an n-type semiconductor layer and a p-type se...
|
|
JP6978595B2 |
The present disclosure includes three dimensional memory arrays. An embodiment includes a first plurality of conductive lines separated from one another by an insulation material, a second plurality of conductive lines arranged to extend...
|
|
JP6976967B2 |
Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of...
|
|
JPWO2020158531A1 |
In order to provide a storage device that does not malfunction in peripheral circuits even if the operating voltage of the cell transistor is lowered, it is composed of a resistance changing element whose resistance state changes accordi...
|
|
JP6974955B2 |
To provide a construction of a hardware which achieves a classification function and a learning function of a neural net by using a simple circuit with a small size and a low power consumption.A crossbar structure is an atomic switch usi...
|
|
JP6971898B2 |
A memory device according to an embodiment includes: a first conductive layer extending in a first direction; a second conductive layer extending in the first direction; a third conductive layer extending in a second direction intersecti...
|
|
JPWO2020145253A1 |
In order to provide a switching element with reduced switching voltage and leakage current, high reliability, and low power consumption, the first wiring with copper as the main component is embedded in the first wiring groove that opens...
|
|
JP6968057B2 |
A memory structure for use in a memory device comprising at least one first layer and at least one second layer: the at least one first layer comprises a plurality of a first element, and the at least one second layer comprises a plurali...
|
|
JP6966232B2 |
The sheet-form rechargeable battery according to this embodiment comprises: a base material (11) having a base part (32) and an opening (31); a dividing line (33) that surrounds the opening (31); an inside charging layer (14b) formed on ...
|
|
JP6957539B2 |
To provide a magnetic storage device which can operate stably.A magnetic storage device includes a storage unit and a control unit. The storage unit includes a storage element, a conductive member, and a terminal. The storage element inc...
|
|
JP6944729B2 |
A logic integrated circuit includes a switch cell array. The switch cell array includes: a plurality of first wirings extending in a first direction; a plurality of second wirings extending in a second direction; a switch cell including ...
|
|
JP2021153118A |
To provide a resistance change type memory with the reduced number of lamination layers.A resistance change type memory includes: a first wiring layer and a second wiring layer; a third wiring layer crossing the first wiring layer and th...
|
|
JP2021150417A |
To provide a switching element with excellent switching characteristics without using a chalcogen element as a main component.A switching element 1 according to an embodiment includes a first electrode 2, a second electrode 3, and a swit...
|
|
JP2021150316A |
To provide a selector that can reduce a leakage current.A selector 1 includes a first electrode 11, a second electrode 13, and a selector layer 12 provided between the first electrode 11 and the second electrode 13 and including SixTeyNz...
|
|
JP2021150522A |
To provide a memory device capable of suppressing a semi-selective leakage current.A memory device according to an embodiment includes: a first conductive layer; a second conductive layer; a resistance change region provided between the ...
|
|
JP2021150390A |
To provide a storage device in which the influence from heat generation of a switching element can be suppressed.A storage device according to an embodiment includes a first wire 10 extending in a first direction, a second wire 20 extend...
|
|
JP2021144967A |
To provide a storage device having higher performance.A storage device according to one embodiment includes: a first ferromagnetic layer; an insulating layer located on the upper side of the first ferromagnetic layer; a second ferromagne...
|
|
JP2021144968A |
To provide a storage device employing a magnetoresistance effect element having a high performance.A memory cell MC includes a selector SE and a resistance variable element VR on a top face of the selector. The selector includes a variab...
|
|
JP2021145004A |
To provide a storage device including a resistance change storage element capable of proper writing.When writing in a first memory cell, a driver supplies first voltage, second voltage higher than the first voltage, and the first voltage...
|
|
JP6937288B2 |
To provide a nonvolatile memory device having high tamper resistance.A nonvolatile memory device 10 includes a data generation circuit and a reconstruction processing circuit. The data generation circuit is configured so that, after gene...
|
|
JP6934258B2 |
This switch element includes a resistance change element, a first transistor, and a second transistor. The resistance change element includes: a metal deposition type resistance change film; a first electrode; and a second electrode. To ...
|
|
JP2021136301A |
To provide a nonvolatile semiconductor memory device capable of preventing a short-circuit between adjacent wiring and reducing wiring resistance.A nonvolatile semiconductor memory device according to an embodiment comprises: a first wir...
|
|
JP2021125677A |
To provide an ionic element or the like capable of improving the convenience.An ionic element according to an embodiment of the present disclosure includes a polymer as a base material, and an electrolyte composed of multiple-bonding ion...
|
|
JP6921961B2 |
Embodiments are directed to a memristive device. The memristive device includes a first conductive material layer. An oxide material layer is arranged on the first conductive layer. And a second conductive material layer is arranged on t...
|
|
JP6912609B2 |
The present disclosure includes memory cells having resistors, and methods of forming the same. An example method includes forming a first conductive line, forming a second conductive line, and forming a memory element between the first ...
|
|
JP6915744B2 |
A variable resistance element includes: a variable resistance layer that is able to occlude and release at least one type of ions, and changes a resistance of the variable resistance layer according to an amount of the at least one type ...
|
|
JP6913763B2 |
Methods, systems, and devices for programming enhancement in memory cells are described. An asymmetrically shaped memory cell may enhance ion crowding at or near a particular electrode, which may be leveraged for accurately reading a sto...
|
|
JP2021108370A |
To provide a variable resistance memory device.A variable resistance memory device includes: a variable resistance layer which includes a first layer formed of a first material and a second layer located on the first layer, the second la...
|
|
JP2021108342A |
To propose a method that can suppress the destruction of the resistance change layer and manufacture a resistance change type memory device with higher yield.In a method for manufacturing a resistance change type memory device having a m...
|
|
JP2021108371A |
To provide a variable resistance memory device.A variable resistance memory device includes: a variable resistance layer which includes a first layer formed of a first material and a second layer located on the first layer, the second la...
|
|
JP2021108343A |
To provide a method that can manufacture a resistance change type memory device having memory cells that does not require processing into a pillar shape, which is difficult to control the shape by etching, and also does not require plana...
|
|
JP6908738B1 |
To provide a resistance change type storage device having an improved three-dimensional structure. A resistance-changing memory of the present invention includes a plurality of pillars 200 extending in a direction perpendicular to a main...
|
|
JP6910357B2 |
Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.
|
|
JP6908120B2 |
This logic integrated circuit has a plurality of first switch cells including variable resistance elements and a plurality of second switch cells including variable resistance elements. The logic integrated circuit comprises: a first out...
|
|
JP2021103749A |
To provide a resistance change element capable of lowering threshold (Vth) of voltage by a switch layer.A resistance change element 1 according to the embodiment is provided with a laminate 4 which is arranged between a first electrode 2...
|
|
JP6901686B2 |
In the cases of performing programming by forming a two-terminal-type variable resistance element on a semiconductor device, it has been difficult to control the programming, and malfunctions have often occurred. This switching element i...
|
|
JP6896704B2 |
Subject matter disclosed herein may relate to correlated electron switches.
|
|
JP6888641B2 |
A resistance change element includes a first lead electrode, a resistance change layer provided on the first lead electrode, and a second lead electrode provided on the resistance change layer. The surface of the first lead electrode on ...
|
|
JP2021089972A |
To reduce chip size.A semiconductor storage device according to an embodiment includes: a mat MT0 including a first conductive layer WLa0, a second conductive layer BLb, and a third conductive layer WLb that are disposed on one side in a...
|
|
JP2021082818A |
To provide a nonvolatile memory element and an operation method for the same.A nonvolatile memory element may include a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switc...
|
|
JP2021082653A |
To provide a switching element capable of suppressing the deterioration of rectification characteristics.A switching element includes: a first wiring that is formed extending in a first direction on a first insulator film; a second wirin...
|
|
JP6872388B2 |
To provide a manufacturing method of a secondary battery capable of increasing discharge capacity.The method of manufacturing a secondary battery according to the present invention comprises a first electrode 12, an n-type metal oxide se...
|
|
JP6874768B2 |
Provided are: a semiconductor device in which a non-volatile switch provided with a rectifying element and a non-volatile element provided with no rectifying element are formed in the same wiring; and a method for producing the semicondu...
|
|
JP6870476B2 |
To easily make resistance of a plurality of electrode pairs different.A semiconductor device comprises: a semiconductor chip 10 with a plurality of electrodes 22; a semiconductor chip 30 with a plurality of electrodes 42 forming a plural...
|
