Title:
半導体コンデンサおよびその製造方法
Document Type and Number:
Japanese Patent JP7360974
Kind Code:
B2
Abstract:
To provide a semiconductor capacitor in which the flow of short-circuiting current in a power source connected to a thin-film capacitor is suppressed, and a manufacturing method for the semiconductor capacitor.SOLUTION: A semiconductor capacitor 100 includes a first region 3 formed in a separation region 2, a second region 5 facing a semiconductor substrate 1, the separation region 2, and the first region 3 through a first insulating film 4, a first electrode 7 connected to the first region 3 and the separation region 2, and a second electrode 6 connected to the second region 5. The first electrode 7 is connected to the semiconductor substrate 1 through the first region 3 and an inversion layer 31 formed in a region of the separation region 2 that is in contact with the first insulating film 4.SELECTED DRAWING: Figure 1
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Inventors:
Wei
Keiichiro Numakura
Shunji Marui
Ryota Tanaka
Yasuaki Hayami
Keiichiro Numakura
Shunji Marui
Ryota Tanaka
Yasuaki Hayami
Application Number:
JP2020038930A
Publication Date:
October 13, 2023
Filing Date:
March 06, 2020
Export Citation:
Assignee:
Nissan Motor Co., Ltd
International Classes:
H01L21/822; H01G4/30; H01G4/33; H01L21/3205; H01L21/768; H01L23/522; H01L27/04
Domestic Patent References:
| JP7249770A | ||||
| JP59149058A | ||||
| JP2010206012A | ||||
| JP2006303377A | ||||
| JP2007173339A | ||||
| JP2003513478A |
Attorney, Agent or Firm:
Hidekazu Miyoshi
Shunichi Takahashi
Masakazu Ito
Toshio Takamatsu
Shunichi Takahashi
Masakazu Ito
Toshio Takamatsu