Title:
結晶育成装置及びこれを用いた結晶育成方法
Document Type and Number:
Japanese Patent JP6977319
Kind Code:
B2
Abstract:
To provide a crystal growth apparatus and a crystal growth method using the same such that a single-crystal growth apparatus employing a Czochralski method can efficiently and easily prevent raw material solidification at a crucible bottom part resulting from an increase in length of a grown crystal body.SOLUTION: A crystal growth apparatus has: a metallic crucible 10 capable of containing and holding a raw material melt 160; an induction coil 80 provided at a circumference of the crucible; a crucible base 20 capable of mounting and supporting the crucible on an upper surface 21; and a bottom-part auxiliary heating body 90 provided in the crucible base, the crucible base having a through hole 22 penetrating between the upper surface and bottom-part auxiliary heating body. A single-crystal growth method comprises the processes of: containing the raw material melt in the crucible; heating the raw material melt in a state in which a lower part of the through hole of a movable part moving in an annular cavity is not linked to an upper part of the through hole of a frame part, and lifting a single crystal 170; and lifting the single crystal while the movable part is moved so that the lower part of the through hole of the movable part is linked to the upper part of the through hole of the frame part.SELECTED DRAWING: Figure 1
More Like This:
Inventors:
Haruo Ishikawa
Masashi Sugiyama
Koichiro Maki
Masashi Sugiyama
Koichiro Maki
Application Number:
JP2017111389A
Publication Date:
December 08, 2021
Filing Date:
June 06, 2017
Export Citation:
Assignee:
Sumitomo Metal Mining Co., Ltd.
International Classes:
C30B15/10; C30B15/00; C30B29/28; C30B29/30; F27B14/06; F27B14/14
Domestic Patent References:
| JP2004123510A | ||||
| JP2011006314A | ||||
| JP54162686A | ||||
| JP2016204180A |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito