DEPOSITING METHOD FOR DIELECTRIC LAYER USING PECVD

Japanese Patent JPH09181064

A

PROBLEM TO BE SOLVED: To prevent the wall of a chamber for productive reaction and plasma from interacting with each other during a process using the plasma by operating the reaction chamber of a plasma enhanced chemical vapor deposition(PECVD) system under a higher pressure above a specific value, and monitoring the operation of the system wherein the direct-current bias of a driven electrode is observed. SOLUTION: A wafer 15 is placed on the grounded susceptor 14 under the driven electrode 13 in a reaction chamber. The pressure in the chamber 11 is then adjusted to 12-20Torr. Mixed gas is excited and ionized to cause chemical reaction on the wafer 15 and form a passivation film there. At this point of the process, the plasma potential of the upper driven electrode 13 is measured, and is controlled to a positive stable direct-current bias, or potential, exceeding approx. 10V. Thus contained uniform glow discharge is caused. This prevents interaction between plasma and the wall 12 of the chamber.

JPH03140469	DEVICE FOR PLASMA CHEMICAL VAPOR GROWTH
JP2945258	PRODUCTION OF NONLINEAR OPTICAL MATERIAL
JP5280784	Film deposition equipment

COTE DONNA RIZZONE (US)
FORSTER JOHN CURT (US)
GREWAL VIRINDER SINGH (US)
KONECNI ANTHONY JOSEPH (US)
PODLESNIK DRAGAN VALENTIN (US)

JP29863796A

July 11, 1997

November 11, 1996

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IBM
SIEMENS AG

C23C16/50; C23C16/44; C23C16/509; C23C16/52; H01L21/31; H01L21/316; H01L21/318; (IPC1-7): H01L21/31; C23C16/50; H01L21/316

Kiyoshi Goda (2 outside)

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