Title:
FORMATION OF THIN FILM
Document Type and Number:
Japanese Patent JPS5888030
Kind Code:
A
Abstract:
PURPOSE: To carry out the cooling of a thin film in good efficiency without generating the deterioration of the formed thin film, by introducing a hydrogen gas into a container after a thin film is grown on a substrate to carry out the cooling of the thin film.
CONSTITUTION: In forming a thin film of amorphous silicon, silicon is heated and evaporated while a base plate 4 is heated and deposited on the base plate 4 while activated or ionized hydrogen is taken in from an introducing pipe 9 to grow the film and, succeedingly, a hydrogen gas is introduced from the introducing pipe 9 to rapidly cool the film within a short time. By this method, the formed film can be cooled in good efficiency without deteriorating the same.
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Inventors:
SHINDOU MASANARI
OOTA TATSUO
SATOU SHIGERU
MIYOUKAN ISAO
SHIMA TETSUO
OOTA TATSUO
SATOU SHIGERU
MIYOUKAN ISAO
SHIMA TETSUO
Application Number:
JP18466481A
Publication Date:
May 26, 1983
Filing Date:
November 18, 1981
Export Citation:
Assignee:
KONISHIROKU PHOTO IND
International Classes:
C23C14/58; B01J19/00; C23C14/00; H01L21/203; (IPC1-7): B01J19/00; C23C13/04; H01L21/02
Attorney, Agent or Firm:
Hiroshi Osaka