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Title:
METHOD FOR GROWING SINGLE CRYSTAL AND ITS DEVICE
Document Type and Number:
Japanese Patent JPH07118090
Kind Code:
A
Abstract:

PURPOSE: To provide a method for growing a single crystal having uniform crystal quality by quantitatively detecting the nonuniformity of the single crystal and the device therefor.

CONSTITUTION: A melt 3 for raw material for crystal packed in a crucible 1 is pulled up to grow the single crystal. At this time, the pulling up speed measured by a pulling up speed measuring instrument 7 is inputted to a decision section 42. That the pulling up speed possesses the correlative relation with the nonuniformity in the crystal axis direction of the single crystal is previously decided by a neural network in the decision section. The pulling up speed is applied to this neural network, by which the nonuniformity of the single crystal 6 is quantitatively predicted. The pulling up speed is adjusted in an adjusting section 44 according to this predicted value and is applied to a pulling up driving device 41.


Inventors:
MIYANO NAOYA
SHINTANI AKIRA
KUBO TAKAYUKI
Application Number:
JP26273193A
Publication Date:
May 09, 1995
Filing Date:
October 20, 1993
Export Citation:
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Assignee:
SUMITOMO METAL IND
International Classes:
C30B15/20; G05B13/02; (IPC1-7): C30B15/20; G05B13/02
Attorney, Agent or Firm:
Tono Kono