PURPOSE: To generate an a-SiC film of desired composition by using as C- containing gas of reaction gas C2H2 gas and ethylene unsaturated hydrocarbon or saturated hydrocarbon thereby to control decomposing capacity as the C- containing gas.
CONSTITUTION: In order to form, for example, an a-SiC film doped with B on a substrate 17, first, second, third and fourth regulating valves 5, 6, 7 and 8 are opened to discharge SiH4 gas, mixture gas of C2H2, CmHn (m≥1, n≥4), B2H6 gas and H2 gas from first, second, third and fourth tanks l, 2, 3 and 4, respectively. These discharging amounts are controlled by mass flow controllers 9, 10, 11 and 12, respectively to be fed through a main pipe 13 to a reaction tube 15. The tube 15 is evacuated in vacuum stage of 0.1W2.0 Torr, at 50 to 40°C of substrate temperature, a high frequency power is applied to a capacity type discharging electrode 16 to generate a glow discharge. Thus, the gas is decomposed to form a B-containing a-SiC film on the substrate at a high speed. Thus, since the C amount of the a-SiC film can be freely varied, the a-SiC film of desired characteristics can be formed.
MIYAMOTO NAOOKI
TAKEMURA HITOSHI
ITO HIROSHI
OKAWA KAZUMASA
ISHIKI KOKICHI
KAWAMURA TAKAO