Title:
METHOD AND ELEMENT STRUCTURE FOR EVALUATING DEPTH OF TRENCH
Document Type and Number:
Japanese Patent JP2783309
Kind Code:
B2
Abstract:
PURPOSE: To evaluate the depth of a groove without destruction by forming the groove in a silicon substrate, using this part as the detector part for measuring the depth of the groove, providing evaluating trenches around the detector part, finding the distance from each detector part of the trench pattern where a seat part reaches the detector part, and performing computation.
CONSTITUTION: After an oxide film 12 is formed on the surface of a silicon substrate 11, a photoresist pattern 13 is formed. Etching is formed, and a hole 14 is formed. Then, the photoresist pattern 13 is removed. With the oxide film 12 as a mask, a groove 16 is formed by anisotropic dry etching. Then, an evaluating detector part 17 is formed by anisortopic etching with alkai aqueous solution. The inlet port of the detector part 17 is narrow, and the inside becomes wider toward the middle part. Hole parts 9a to 9c for forming depth measuring trenches are formed around the detector parts 17 so that the distances from the detector parts are different. Etching is performed, and evaluating trenches 21a to 21c are formed. The trench 21f, whose bottom part reaches the detector part, and a distance Δ2 are obtained, and D2 is obtained by D2=Δ2tanθ.
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Inventors:
OKA NAOMASA
Application Number:
JP31543492A
Publication Date:
August 06, 1998
Filing Date:
November 25, 1992
Export Citation:
Assignee:
MATSUSHITA DENKO KK
International Classes:
H01L21/66; (IPC1-7): H01L21/66
Domestic Patent References:
| JP59214233A | ||||
| JP62282444A |
Attorney, Agent or Firm:
Takehiko Matsumoto