To provide a method for manufacturing a crucible for polycrystalline silicon production, which exerts sufficient strength, both at room temperature and at a temperature around melting point of silicon, so that it can be manufactured in large size and is highly effective in preventing impurity contamination of polycrystalline silicon ingot produced using the crucible.
The method for manufacturing the crucible for polycrystalline silicon production by a slip casting method comprises pouring a slurry into a casting mold and molding and firing the same, provided that the slurry comprises a molten silica powder having an average particle size of ≥1 and ≤40 μm, an alumina powder having an average particle size of <1 μm and a silica powder having an average particle size of <1 μm dispersed therein.
MATSUYAMA TOYOKAZU
FUJITA MITSUHIRO
TANAKA HIDENORI
KASHIMA KAZUHIKO
Rie Ishimura
Next Patent: RAW MATERIAL POWDER FOR LITHIUM-NICKEL COMPOSITE METAL OXIDE