METHOD FOR MEASURING SURFACE TEMPERATURE OF SINTERED SILICON NITRIDE BODY

Title:

METHOD FOR MEASURING SURFACE TEMPERATURE OF SINTERED SILICON NITRIDE BODY

Document Type and Number:

Japanese Patent JPH06147990

Kind Code:

A

Abstract:

PURPOSE: To provide a method by which the surface temperature of a sintered nitride body can be measured in a nondestructive way.

CONSTITUTION: By irradiating the surface of a sintered silicon nitride body exposed to a high temperature with X rays, the intensity of diffracted X rays is measured and the ratio of the intensity of diffracted X rays from an arbitrary diffracting surface in a surface-oxide phase to the intensity of diffracted X rays from another arbitrary diffracting surface in β/3-Si3N4 phase which is the main constituent of the sintered body from the measuring signal of the intensity of diffracted X rays. Then the surface temperature of the sintered silicon nitride body exposed to the high temperature is measured from the ratio and exposing time by using previously found relations among the ratio, exposing time, and exposing temperature.

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Inventors:

NISHIMURA NOBUHIKO
TSUNODA HIDEO
UMADA MASAHIRO
TAKITA KATSUHIKO
MATSUO SHIGETO

Application Number:

JP1768691A

Publication Date:

May 27, 1994

Filing Date:

February 08, 1991

Export Citation:

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Assignee:

MITSUBISHI HEAVY IND LTD

International Classes:

G01J5/00; G01J5/58; G01N23/20; (IPC1-7): G01J5/00; G01N23/20

Attorney, Agent or Firm:

Akira Uchida (2 outside)

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