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Title:
PLASMA ETCHING APPARATUS
Document Type and Number:
Japanese Patent JP2015037110
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a plasma etching apparatus that has a suppressed thickness of a process gas jet plate.SOLUTION: In the plasma etching apparatus including plasma generation means for jetting a process gas in plasma, the plasma generation means includes an IPC antenna, the process gas jet plate with a plurality of minute openings formed to jet the process gas and with process gas passage grooves formed therein to supply the process gas to the minute openings which is located adjacently to the IPC antenna, a closure plate covering an upper surface of the process gas jet plate, a housing container forming a space to house the IPC antenna, a hollow body located in the space to suppress a discharge from the IPC antenna and maintain the space, and depressurization means for depressurizing the housing container, and the housing container is depressurized to reduce a pressure acting on the process gas jet plate and the closure plate against depressurization of an etching chamber.

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Inventors:
ARAMI JUNICHI
Application Number:
JP2013167978A
Publication Date:
February 23, 2015
Filing Date:
August 13, 2013
Export Citation:
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Assignee:
DISCO ABRASIVE SYSTEMS LTD
International Classes:
H01L21/3065
Domestic Patent References:
JP2011146409A2011-07-28
JP2004228182A2004-08-12
JP2007150281A2007-06-14
JP2006032460A2006-02-02
Foreign References:
WO2012033191A12012-03-15
Attorney, Agent or Firm:
Matsumoto 昂
Tomohiro Okamoto



 
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