Process-proof current leakage reduction in static random access memory (SRAM) by a service voltage bias circuit

Title:

Process-proof current leakage reduction in static random access memory (SRAM) by a service voltage bias circuit

Document Type and Number:

Japanese Patent JP6113930

Kind Code:

B2

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Inventors:

Grati, Chirag
Achilles, Ashish
Narayanan, Bencatas Bramanian

Application Number:

JP2016538723A

Publication Date:

April 12, 2017

Filing Date:

December 12, 2014

Export Citation:

Assignee:

QUALCOMM INCORPORATED

International Classes:

G11C11/413; G11C11/412

Domestic Patent References:

JP2013525936A
JP2006331519A

Foreign References:

Attorney, Agent or Firm:

Kurata Masatoshi
Yoshihiro Fukuhara
Morisezo Iseki
Takashi Okada

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