Title:
RESIST MATERIAL AND PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP3871024
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a resist material having a high contrast in alkali dissolution rate before and after exposure, having high sensitivity and high resolution and exhibiting superior etching resistance by adding a high molecular compound obtained by copolymerizing a norbornadiene carboxylate substitution product having an acid labile group and an indene substitution product as a base resin to a resist material.
SOLUTION: The resist material contains a high molecular compound having repeating units of formula (1) (where R1 and R2 are each H, hydroxy, alkyl, substitutable alkoxy or halogen; R3 is an acid labile group; (m) is 0 or a positive integer of 1-4; and (p) and (q) are each a positive number) and having a weight average molecular weight of 1,000-500,000.
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Inventors:
Jun Hatakeyama
Takanobu Takeda
Osamu Watanabe
Koji Hasegawa
Takanobu Takeda
Osamu Watanabe
Koji Hasegawa
Application Number:
JP2001204603A
Publication Date:
January 24, 2007
Filing Date:
July 05, 2001
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G03F7/039; C08F232/08; C08F234/00; G03F7/004; H01L21/027; (IPC1-7): G03F7/039; C08F232/08; C08F234/00; G03F7/004; H01L21/027
Domestic Patent References:
| JP4249509A | ||||
| JP11338151A | ||||
| JP9230595A | ||||
| JP11084661A | ||||
| JP2001122929A | ||||
| JP2000198823A | ||||
| JP4106112A |
Attorney, Agent or Firm:
Takashi Kojima
Yuko Nishikawa
Yuko Nishikawa