PURPOSE: To provide a method and a system for continuously forming a functional deposited film with good characteristics, by preventing gases mingling between film forming chambers under different pressures.
CONSTITUTION: In a method and a system for continuously forming a functional deposited film of a photovoltaic element, a belt-shaped board 105 is continuously moved lengthwise and passed through a plurality of film forming chambers 101 and 102 connected with a gas gate 103 having a slit-shaped separated path for supplying a cleaning gas. A given conductive semiconductor layer can be deposited on the belt-shaped board 105 in each chamber 101 or 102 using a plasma CVD method. The gas gate 103 is provided between the chamber 102 for forming an i-type layer included in a semiconductor junction and a chamber 101 put under higher pressure than that of the chamber 102 for forming a n- or p-type layer. In at least one of gas gates 103, an intake of the cleaning gas is put near the chamber 101 from the center of the separated path in the gas gate 103.
YOSHISATO SUNAO (JP)
OKABE SHOTARO (JP)
SAKAI AKIRA (JP)
KANAI MASAHIRO (JP)
YOSHINO TEKEHITO (JP)
