Title:
PHOTOELECTRIC TRANSDUCER DEVICE
Document Type and Number:
Japanese Patent JPS595679
Kind Code:
A
Abstract:
PURPOSE:To provide a highly efficient photoelectric transducer device, by forming a-Si including oxygen atoms in the first doping layer which is to be formed on ITO (Indium Tin Oxide) or SnO2, thereafter forming the same conductive type a-Si, which does not include oxygen. CONSTITUTION:The concentration of B2H6, which is used for obtaining a P type by 20% SiH4 that is dilluted by an H2 base, is made to be 0.05-1% with respect SiH4. O2 is made to be 2-10vol% with respect to SiH4. This gas is made to act on a substrate at a temperature of 200 deg.C, and a P type a-Si layer with a thickness of 50Angstrom is formed. At this time, suppression effect of SiO or SiO2 is made conspicuous by mixing oxygen, and the increase in series resistance can be prevented when a solar battery is manufactured. The thickness of ordinary P type a-Si 10, in which oxygen atoms are not introduced, is 50Angstrom . The sum of the P type layer is 100Angstrom . In this way, the light absorbing loss is made to be about a half in comparison with the case only the ordinary P type a-Si is used. The P-I interface is not different from the ordinary element. The resistance can be made smaller than a single oxygen doped P type a-Si. The increase in the series resistance can be avoided.
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Inventors:
HIRAO TAKASHI
KITAGAWA MASATOSHI
MORI KOUSHIROU
ISHIHARA SHINICHIROU
OONO MASAHARU
KITAGAWA MASATOSHI
MORI KOUSHIROU
ISHIHARA SHINICHIROU
OONO MASAHARU
Application Number:
JP11483882A
Publication Date:
January 12, 1984
Filing Date:
July 01, 1982
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L31/04; H01L31/20; (IPC1-7): H01L31/04
Domestic Patent References:
| JPS56142680A | 1981-11-07 | |||
| JPS56150876A | 1981-11-21 |
Attorney, Agent or Firm:
Akira Kobiji (2 outside)