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Title:
A manufacturing method of a silicon carbide semiconductor device
Document Type and Number:
Japanese Patent JP6233210
Kind Code:
B2
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Inventors:
Saitou
Tomoaki Hatayama
Takeyoshi Masuda
Application Number:
JP2014134170A
Publication Date:
November 22, 2017
Filing Date:
June 30, 2014
Export Citation:
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Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01L21/336; H01L21/28; H01L21/283; H01L21/302; H01L21/3065; H01L29/12; H01L29/78
Domestic Patent References:
JP2014075475A
JP3058485A
Attorney, Agent or Firm:
Fukami patent office



 
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