Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP3574040
Kind Code:
B2
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Inventors:
Hiroyuki Zhang
Hideki Uochi
Toru Takayama
Shunpei Yamazaki
Yasuhiko Takemura
Hideki Uochi
Toru Takayama
Shunpei Yamazaki
Yasuhiko Takemura
Application Number:
JP2000123594A
Publication Date:
October 06, 2004
Filing Date:
April 25, 2000
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/20; H01L21/02; H01L21/336; H01L27/12; H01L29/786; (IPC1-7): H01L21/20; H01L21/336; H01L29/786
Domestic Patent References:
| JP6244104A | ||||
| JP45022173B1 | ||||
| JP2140915A | ||||
| JP4186635A | ||||
| JP61234027A | ||||
| JP2199871A |
Other References:
Yunosuke Kawazu, Hiroshi Kudo, Seinosuke Onaria and Toshihiro Arai,Low-Temperature Crystallization of Hydrogenated Amorphous Silicon Induced by Nickel Formation,JAPANESE JOURNAL OF APPLIED PHYSICS,1990年12月,Vol.29,No.12,p.2698-2704