Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023173420
Kind Code:
A
Abstract:
To provide a silicon carbide semiconductor device with reliability, capable of being easily formed, and stably securing a predetermined proof pressure.SOLUTION: A p-type outer peripheral region 25 is formed by being arranged to an upper part 24a and a lower part 23a of a p++type contact extension part 15a, a p-type base extension part 13a, and a p+type extension part 22a in order from a front surface side of a semiconductor substrate 40 in an outer peripheral part 1b of an active region 1, and surrounds a circumference of a center part of the active region 1. The p-type outer peripheral region 25 includes a plurality of steps gradually recessed to an inner side as separated as from the front surface of the semiconductor substrate 40 to a depth direction to an outer side end part. A p-type region 31 (a JTE region 30a) in an innermost side, constructing a proof pressure structure 30 is contacted to an outer side end part of the p++type contact extension part 15a. A p+type embedded region 26 is selectively provided so as to be separated from the JTE region 30a and the p-type outer peripheral region 25 to a position with a depth similar to a lower part 23a of the p+type extension part 22a just under the JTE region 30a, and surrounds the circumference of the active region 1.SELECTED DRAWING: Figure 3
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Inventors:
HOSHI YASUYUKI
Application Number:
JP2022085668A
Publication Date:
December 07, 2023
Filing Date:
May 26, 2022
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H01L29/78; H01L29/06; H01L29/12
Attorney, Agent or Firm:
Akinori Sakai