Title:
ATOMIC LAYER DEPOSITION DEVICE AND ATOMIC LAYER DEPOSITION METHOD
Document Type and Number:
WIPO Patent Application WO/2022/118879
Kind Code:
A1
Abstract:
A gas supplying unit (4), which supplies gas to the inside of a chamber (3) capable of accommodating a film deposition target so as to be freely taken out or put in, has: a feedstock gas supply line (L2) that supplies a feedstock gas to the inside of the chamber (3); an ozone gas supply line (L1) that supplies at least 80 vol% ozone gas to the inside of the chamber (3); and an inert gas supply line (L3) that supplies an inert gas to the inside of the chamber (3). The ozone gas supply line (L1) is provided with: an ozone gas buffer section (L12) that, via the opening and closing of a shutoff valve (V1) provided to the ozone gas supply line (L1), accumulates and freely seals the ozone gas inside the ozone gas supply line (L1) and freely supplies the accumulated ozone gas to the inside of the chamber (3); and an ozone gas buffer section pressure gauge (PL1) that measures the gas pressure inside the ozone gas buffer section (L12).
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Inventors:
KAMEDA NAOTO (JP)
HAGIWARA TAKAYUKI (JP)
ABE AYAKA (JP)
SHINO TATSUNORI (JP)
MOTODA SOICHIRO (JP)
HAGIWARA TAKAYUKI (JP)
ABE AYAKA (JP)
SHINO TATSUNORI (JP)
MOTODA SOICHIRO (JP)
Application Number:
PCT/JP2021/044076
Publication Date:
June 09, 2022
Filing Date:
December 01, 2021
Export Citation:
Assignee:
MEIDEN NANOPROCESS INNOVATIONS INC (JP)
International Classes:
C23C16/455; C23C16/40; H01L21/31; H01L21/316
Domestic Patent References:
| WO2020170482A1 | 2020-08-27 |
Foreign References:
| JP2010028095A | 2010-02-04 | |||
| JP2014192379A | 2014-10-06 | |||
| JP2014197636A | 2014-10-16 |
Attorney, Agent or Firm:
KOBAYASHI, Hiromichi et al. (JP)
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