Title:
CRYSTAL, LAYERED STRUCTURE, ELEMENT, ELECTRONIC DEVICE, ELECTRONIC APPARATUS, AND SYSTEM
Document Type and Number:
WIPO Patent Application WO/2024/048764
Kind Code:
A1
Abstract:
[Problem] To provide: a crystal having excellent crystallinity; a layered structure; and an element, an electronic device, an electronic apparatus, and a system that use the crystal and the layered structure. [Solution] This layered structure is produced by forming at least a compound film on a crystal substrate, and then layering a crystal film containing a crystal made of a crystalline metal compound product containing metal compound products including compound products of Hf, Zr, and Si as main components. The layering is performed by forming the crystal film using compound elements in the compound film.
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Inventors:
KIJIMA TAKESHI (JP)
Application Number:
PCT/JP2023/032023
Publication Date:
March 07, 2024
Filing Date:
August 31, 2023
Export Citation:
Assignee:
GAIANIXX INC (JP)
International Classes:
H01L21/316; C23C14/08; H01L21/20; H01L21/336; H01L21/8234; H01L27/06; H01L27/088; H01L29/12; H01L29/739; H01L29/78; H01L29/786; H10N30/076; H10N30/079; H10N30/853; H10N30/88
Domestic Patent References:
| WO2005038929A1 | 2005-04-28 | |||
| WO2023145808A1 | 2023-08-03 |
Foreign References:
| JP2001257344A | 2001-09-21 | |||
| JP2007019515A | 2007-01-25 | |||
| JP2002314067A | 2002-10-25 |
Other References:
TAHIR DAHLANG; OH SUHK KUN; KANG HEE JAE; TOUGAARD SVEN: "Composition dependence of dielectric and optical properties of Hf-Zr-silicate thin films grown on Si(100) by atomic layer deposition", THIN SOLID FILMS, ELSEVIER, AMSTERDAM, NL, vol. 616, 5 September 2016 (2016-09-05), AMSTERDAM, NL , pages 425 - 430, XP029812125, ISSN: 0040-6090, DOI: 10.1016/j.tsf.2016.09.001
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