Title:
FILM FORMATION SIMULATION METHOD, FILM FORMATION SIMULATION PROGRAM, FILM FORMATION SIMULATOR, AND FILM-FORMING DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/238534
Kind Code:
A1
Abstract:
A film formation simulation method according to an embodiment of the present disclosure includes a step for generating representative particles corresponding to incident radical flux, and calculating the attachment, desorption, migration, and deposition of each of the representative particles at the film formation surface by probability. This film formation simulation method includes, in the abovementioned step, calculating deposition as voxels imparted with state information indicating either bonding or non-bonding between the representative particle and the film formation surface, and thereby expressing the film quality and the coverability of a film on the film formation surface.
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Inventors:
KUBOI NOBUYUKI (JP)
Application Number:
PCT/JP2023/016171
Publication Date:
December 14, 2023
Filing Date:
April 24, 2023
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
C23C14/34; C23C16/52; H01L21/31
Domestic Patent References:
| WO2017122404A1 | 2017-07-20 |
Foreign References:
| JP2000169969A | 2000-06-20 |
Other References:
NANBU ENICHI, WARABIOKA, ICHIRO: "Study of Magnetron Sputtering by Monte Carlo Simulation Method", TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS SERIES B, vol. 59, no. 568, 1 December 1993 (1993-12-01), pages 109 - 116, XP093113937
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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