METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT

WIPO Patent Application WO/2014/097510

A1

The present invention provides a method for manufacturing a magnetoresistance effect element capable of reducing the sublimation of a metal when the metal is oxidized while improving throughput during the formation of a tunnel barrier layer of a metallic oxide. An embodiment of the invention is a method for manufacturing a magnetoresistance effect element, wherein said method includes a step of forming the tunnel barrier layer. The step of forming the tunnel barrier layer includes a film-forming step and an oxidation step. In the film-forming step, a metallic film is formed on a substrate, and in the oxidation step, the metallic film is subjected to an oxidative treatment. In the oxidation step, a Mg-formed substrate is held on a substrate holder in a treatment container in which the oxidative treatment is carried out, oxygen gas is introduced into the treatment container at a temperature at which Mg is not sublimated, the oxygen gas is supplied to the substrate, and the substrate is heated after the introduction of the oxygen gas.

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SEINO TAKUYA (JP)
NISHIMURA KAZUMASA (JP)
OKUYAMA HIROKI (JP)
OTANI YUICHI (JP)
MUROOKA YUTA (JP)
SHIMANE YOSHIMITSU (JP)

PCT/JP2013/005249

June 26, 2014

September 04, 2013

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CANON ANELVA CORP (JP)

H01L43/12; H01L21/316; H01L21/8246; H01L27/105; H01L43/08

WO2010044134A1	2010-04-22
WO2012086183A1	2012-06-28

JP2013145846A

2013-07-25

OKABE, Yuzuru et al. (JP)
Okabe 讓 (JP)

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