Title:
POTENTIAL DIFFERENCE GENERATION DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/228630
Kind Code:
A1
Abstract:
Provided is a potential difference generation device which can directly generate electricity. The potential difference generation device 10 comprises: a nano structure 16A which has a pedestal 24 which is composed of a hydrogen storage metal or the like and a multilayer film 25A provided on the pedestal 24; a first electrode 17 which is provided on the nano structure 16A; and a second electrode 18 which is provided to face the multilayer film 25A, wherein the multilayer film 25A has a configuration comprising a first layer including a hydrogen storage metal and having a thickness less than 1000 nm, a second layer including a hydrogen storage metal of a different type than the first layer and having a thickness less than 1000 nm, and a heterogeneous material interface formed between the first layer and the second layer. A nano structure 16A is heated and thus hydrogen permeates or diffuses through the heterogeneous material interface due to quantum diffusion, charged particles are emitted from the multilayer film 25A, the charged particles are captured by the second electrode 18, and thus a potential difference is generated between the first electrode 17 and the second electrode 18.
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Inventors:
IWAMURA YASUHIRO (JP)
ITOH TAKEHIKO (JP)
YAMAUCHI SHINOBU (JP)
TAKAHASHI TOMONORI (JP)
YOSHINO HIDEKI (JP)
ITOH TAKEHIKO (JP)
YAMAUCHI SHINOBU (JP)
TAKAHASHI TOMONORI (JP)
YOSHINO HIDEKI (JP)
Application Number:
PCT/JP2023/015547
Publication Date:
November 30, 2023
Filing Date:
April 19, 2023
Export Citation:
Assignee:
CLEAN PLANET INC (JP)
International Classes:
F24V30/00; H01M8/00; H01M14/00
Domestic Patent References:
| WO2000077266A1 | 2000-12-21 |
Foreign References:
| JP2009252370A | 2009-10-29 | |||
| JP2021162227A | 2021-10-11 | |||
| JP2019168221A | 2019-10-03 | |||
| JP2003336798A | 2003-11-28 | |||
| JP2007012419A | 2007-01-18 | |||
| JP2002093477A | 2002-03-29 |
Attorney, Agent or Firm:
DORAIT IP LAW FIRM (JP)
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