REFLECTION-TYPE MASK BLANK, REFLECTION-TYPE MASK, AND METHOD FOR MANUFACTURING REFLECTION-TYPE MASK

WIPO Patent Application WO/2024/085089

A1

Provided is a reflection-type mask blank having excellent strength of a surface on the reverse surface side on which a conductive film is disposed.　This reflection-type mask blank comprises: a substrate; a conductive film disposed on one surface side of the substrate; a protective film disposed on the opposite side of the conductive film from the substrate side; a multilayer reflective film that reflects EUV light and is disposed on the other surface side of the substrate; and an absorbent film disposed on the opposite side of the multilayer reflective film from the substrate side. The compositions of the conductive film and the protective film differ. The conductive film includes a first element selected from the group consisting of chromium and tantalum. The protective film includes one or more types of a second element selected from the group consisting of chromium, boron, carbon, nitrogen, and oxygen. The thickness of the protective film is 5 nm or greater. When the protective film is analyzed by X-ray photoelectron spectroscopy, the peak corresponding to a 2p3/2 orbit of the chromium appears at 576.7 eV or less.

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MIZOGUCHI MASAYOSHI (JP)
TOMIZAWA TAKESHI (JP)
MIYAGI TAKAHIRA (JP)
MIURA NAOYUKI (JP)
FUDETANI TAIGA (JP)
ONO YUSUKE (JP)

PCT/JP2023/037235

April 25, 2024

October 13, 2023

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AGC INC (JP)

G03F1/24; C23C14/04; C23C14/06; C23C14/35; G03F1/48

JP2011176218A	2011-09-08
JP2021148928A	2021-09-27
JP2012204708A	2012-10-22
JP2022045198A	2022-03-18
JP2012182235A	2012-09-20

T.S. PARTNERS et al. (JP)

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