Title:
SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE FABRICATION METHOD, SEMICONDUCTOR DEVICE FABRICATION METHOD PROGRAM AND SEMICONDUCTOR FABRICATION DEVICE
Document Type and Number:
WIPO Patent Application WO/2007/013580
Kind Code:
A1
Abstract:
There are provided a semiconductor device having a micro structure capable of compensating irregularities in the fabrication stage by using a result of a test performed by a tester, its fabrication method, its fabrication method program, and a semiconductor fabrication device. In a tester (1), a test sound wave is inputted so as to detect an output voltage of the device responding to the input of the test sound wave. A bonder (60) receives a test result from the tester (1) and performs classification of the device. Bonding is performed for adjusting the amplification ratio of an amplifier corresponding to the classified group.
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Inventors:
IKEUCHI NAOKI (JP)
YAKABE MASAMI (JP)
YAKABE MASAMI (JP)
Application Number:
PCT/JP2006/314957
Publication Date:
February 01, 2007
Filing Date:
July 28, 2006
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
IKEUCHI NAOKI (JP)
YAKABE MASAMI (JP)
IKEUCHI NAOKI (JP)
YAKABE MASAMI (JP)
International Classes:
G01P21/00; H01L21/66
Foreign References:
| JPH0933567A | 1997-02-07 | |||
| JPH0534371A | 1993-02-09 | |||
| JPH01502581A | 1989-09-07 |
Attorney, Agent or Firm:
FUKAMI, Hisao et al. (Nakanoshima Central Tower 22nd Floor, 2-7, Nakanoshima 2-chome, Kita-ku, Osaka-sh, Osaka 05, JP)
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