SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2000/051134

A1

Even if a memory array voltage is low, a sense amplifier senses quickly a weak signal from a memory cell with low power consumption. Drive switches for overdrive are dispersedly arranged within the region of the sense amplifiers, and drive switches for restoring are arranged concentratedly at one end of the sense amplifier array. An overdrive potential is supplied through a meshlike power supply wiring. Each overdrive switch initially senses data from a pair of data lines with higher voltage than that of the amplitude of the data lines, realizing quick sensing. By arranging the drive switches dispersedly, the sensing current is dispersed and the difference in sensing voltage between one and the other ends is suppressed.

JPH11225062	OUTPUT CIRCUIT
JP2006066020	SEMICONDUCTOR MEMORY
JPH07101732	[Title of the Invention] A detection amplifier whose layout is optimized in a C-MOS dynamic ram.

TAKEMURA RIICHIRO (JP)
ITOH KIYOO (JP)
SEKIGUCHI TOMONORI (JP)
SAKATA TAKESHI (JP)
KIMURA KATSUTAKA (JP)

PCT/JP2000/000698

August 31, 2000

February 09, 2000

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HITACHI LTD (JP)
TAKEMURA RIICHIRO (JP)
ITOH KIYOO (JP)
SEKIGUCHI TOMONORI (JP)
SAKATA TAKESHI (JP)
KIMURA KATSUTAKA (JP)

G11C11/409; G11C5/06; G11C7/06; G11C11/401; G11C11/406; G11C11/4074; G11C11/4091; H01L21/8242; H01L27/108; (IPC1-7): G11C11/4091

WO1997024729A1

1997-07-10

JP2000058785A	2000-02-25
US5375095A	1994-12-20
JPH11297071A	1999-10-29
JPH10269772A	1998-10-09
US6014337A	2000-01-11
US5900665A	1999-05-04
US5867440A	1999-02-02
US5801576A	1998-09-01

See also references of EP 1164595A4

Ogawa, Katsuo (Nihonbashi-kayabacho 2-chome Chuo-ku Tokyo, JP)

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