Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/272889
Kind Code:
A1
Abstract:
Provided in the present disclosure are a method for manufacturing a semiconductor structure, and a semiconductor structure. The method for manufacturing a semiconductor structure comprises: forming a capacitive post in an initial structure; removing part of the initial structure to form a trench, wherein the trench exposes part of a side wall of the capacitive post and a substrate of the initial structure; forming a dielectric layer, wherein the dielectric layer at least covers an exposed surface of the capacitive post; forming a first upper electrode, wherein the first upper electrode covers a surface of the dielectric layer; and forming a second upper electrode, wherein the second upper electrode covers a surface of the first upper electrode. In the axial direction of the capacitive post, the portions of the second upper electrode that are formed in the trench are discontinuous, and the discontinuous portions of the second upper electrode form air gaps.
More Like This:
| JPS59145542 | LARGE-SCALE INTEGRATED CIRCUIT |
| JPS6076140 | SEMICONDUCTOR DEVICE |
| JPS59178748 | LASER PROCESSING METHOD |
Inventors:
WU YULEI (CN)
YANG BIN (CN)
YANG BIN (CN)
Application Number:
PCT/CN2021/112198
Publication Date:
January 05, 2023
Filing Date:
August 12, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/82
Foreign References:
| CN110504283A | 2019-11-26 | |||
| CN110504284A | 2019-11-26 | |||
| CN107968044A | 2018-04-27 | |||
| CN108155152A | 2018-06-12 | |||
| US20050051822A1 | 2005-03-10 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
Download PDF:
Previous Patent: CLEANING APPARATUS
Next Patent: MEDICAL WASTE PLASMA GASIFICATION MELTING TREATMENT APPARATUS, SYSTEM AND METHOD
Next Patent: MEDICAL WASTE PLASMA GASIFICATION MELTING TREATMENT APPARATUS, SYSTEM AND METHOD