Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE, ELECTRIC POWER CONVERSION DEVICE, AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/038504
Kind Code:
A1
Abstract:
This silicon carbide semiconductor device has, on the upper surface of a semiconductor layer (20), a trench (6) that passes through a source region (3) and a body region (5) and reaches a drift layer (2). On the bottom portion in the trench (6), a Schottky electrode (10) is formed. A gate insulation film (7) is formed so as to cover the side surface of the trench (6) and the upper surface of the Schottky electrode (10). On the gate insulation film (7), a gate electrode (8) is formed so as to be embedded in the trench (6). Below the trench (6) in the drift layer (2), a protective region 13 is formed so as to be separate from the trench (6).
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Inventors:
YAMASHIRO YUSUKE (JP)
KONISHI KAZUYA (JP)
KONISHI KAZUYA (JP)
Application Number:
PCT/JP2022/030967
Publication Date:
February 22, 2024
Filing Date:
August 16, 2022
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78; H01L29/12
Foreign References:
| CN212542447U | 2021-02-12 | |||
| CN206657811U | 2017-11-21 | |||
| CN109192779A | 2019-01-11 | |||
| JP2010109221A | 2010-05-13 | |||
| JP2013089778A | 2013-05-13 | |||
| JP2016009712A | 2016-01-18 | |||
| JP2020087958A | 2020-06-04 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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