Title:
STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/042419
Kind Code:
A1
Abstract:
Provided is a storage device which can be micro-fabricated or highly integrated. This storage device comprises a memory cell and a first insulator. The memory cell comprises a capacitive element and a transistor disposed on the capacitive element. The capacitive element comprises a first conductor, a second insulator disposed on the first conductor, and a second conductor disposed on the second insulator. The first insulator is disposed on the second conductor. The transistor comprises the second conductor, a third conductor disposed on the first insulator, an oxide semiconductor, a third insulator disposed on the oxide semiconductor, and a fourth conductor disposed on the third insulator. An opening part reaching the second conductor is formed in the first insulator and the third conductor. A portion of the oxide semiconductor is disposed in the opening part. The oxide semiconductor comprises a region in contact with an upper surface of the second conductor, a region in contact with a side surface of the third conductor, and a region in contact with a portion of the upper surface of the third conductor. An angle formed by the side surface of the first insulator at the opening part and the upper surface of the first conductor is 45 degrees to less than 90 degrees.
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Inventors:
KUNITAKE HITOSHI (JP)
MATSUZAKI TAKANORI (JP)
YAMAZAKI SHUNPEI (JP)
MATSUZAKI TAKANORI (JP)
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2023/058080
Publication Date:
February 29, 2024
Filing Date:
August 10, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H10B12/00; H01L21/205; H01L21/316; H01L21/8234; H01L27/088; H01L29/786; H10B53/30
Foreign References:
| JP2016149552A | 2016-08-18 | |||
| JP2020120116A | 2020-08-06 | |||
| JP2022044110A | 2022-03-17 |
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