Title:
SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/196384
Kind Code:
A1
Abstract:
A substrate treatment method according to one embodiment of the present disclosure includes a preparation step, a first etching step, and a second etching step. In the preparation step, a substrate is prepared that has, on the surface thereof, a device structure including a multilayer film in which an Mo film (14) is formed on the surface of a TiN film (13) in multiple stages. In the first etching step, an etching treatment of the substrate is performed after the preparation step by means of a first etching solution that includes phosphoric acid, acetic acid, and nitric acid. In the second etching step, an etching treatment of the substrate is performed after the first etching step by means of a second etching solution that includes sulfuric acid and water.
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Inventors:
KAGAWA KOJI (JP)
Application Number:
PCT/JP2022/009292
Publication Date:
September 22, 2022
Filing Date:
March 04, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/304; H01L21/306; H01L21/308; H01L21/3205; H01L21/3213; H01L21/768; H01L23/532
Foreign References:
| JP2020145412A | 2020-09-10 | |||
| JP2016119359A | 2016-06-30 | |||
| JP2020145357A | 2020-09-10 | |||
| JP2020126974A | 2020-08-20 | |||
| JP2012222237A | 2012-11-12 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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