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JP2021002629A |
To provide a three-dimensional structure storage device which can be highly integrated.A storage device comprises: a memory cell that comprises a resistance changing storage region extending in a first direction, a semiconductor layer wh...
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JP6810725B2 |
The invention provides a resistive memory with better area efficiency without degrading reliability, which includes an array area, word lines, a local source line, bit lines, and a shared source line. In the array area, memory cells are ...
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JP6808668B2 |
A semiconductor storage device comprises a plurality of memory cells arranged in a matrix. Each of the memory cells includes: a semiconductor storage element including a silicon carbide substrate and a silicon carbide film on a first sur...
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JP6807564B2 |
A time-dependent element of the present invention includes a time-dependent phase transition material that undergoes solid-solid phase transition developing with time after production irrespective of the presence of an external stimulus,...
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JP2020205405A |
To provide a memristor and a neuromorphic device including the same.Regarding memristors and neuromorphic devices that include the same, the memristor has a lower electrode and an upper electrode that are separately arranged and a first ...
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JPWO2019082860A1 |
Provided is a method for rewriting a resistance changing element that increases the number of rewritings, and a non-volatile storage device that uses the resistance changing element. A resistance change layer is arranged between the firs...
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JP6801891B2 |
Provided is a thin film in which the semiconductor characteristics of an In-Ga-Zn-O-based oxide are reversible, and a method of manufacturing the same. A semiconductor/insulator reversible-change thin film comprising an In-Ga-Zn-O-based ...
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JP6801768B2 |
A sputtering target contains Ge, Sb, and Te and has a high-oxygen region with a high oxygen concentration and a low-oxygen region having a lower oxygen concentration than the high-oxygen region, and has a structure in which the low-oxyge...
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JP6798489B2 |
In order to improve the number rewrites by improving the dielectric breakdown resistance of an ion conducting layer in a variable resistance element, this variable resistance element is provided with: a first electrode that contains at l...
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JP2020535630A |
To provide a resistive memory device including a control unit for controlling a plurality of memory cells. A plurality of memory cells include a first terminal, a second terminal, and a phase change segment containing a phase change mate...
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JP6795496B2 |
A cross-point memory array includes a plurality of variable resistance memory cell pillars. Adjacent memory cell pillars are separated by a partially filled gap that includes a buried void. In addition, adjacent memory cell pillars inclu...
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JP6791845B2 |
A switch device according to an embodiment of the technology includes a first electrode, a second electrode that faces the first electrode, and a switch layer provided between the first electrode and the second electrode. The switch laye...
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JP6787785B2 |
A switch device includes a first electrode, a second electrode, and a switch layer. The second electrode is disposed to face the first electrode. The switch layer is provided between the first electrode and the second electrode. The swit...
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JP6785315B2 |
Methods, systems, and devices for a three-dimensional memory array are described. Memory cells may transform when exposed to elevated temperatures, including elevated temperatures associated with a read or write operation of a neighborin...
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JP6783306B2 |
A three dimensional (3D) memory array is disclosed. The 3D memory array may include an electrode plane and a memory material disposed through and coupled to the electrode plane. A memory cell included in the memory material is aligned in...
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JP2020176297A |
To provide a sputtering target that can deposit a chalcogenide material having improved heat resistance, and a method for producing the same, and a method for producing a memory device.A sputtering target is composed of an alloy that con...
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JP2020177717A |
To improve memory access parallelism without sacrificing an operation margin.A storage section includes: a plurality of first wires extending in a first direction; a plurality of second wires extending in a second direction different fro...
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JP6775349B2 |
A nonvolatile storage device includes: first wirings arranged in first and second directions that intersect each other, and extending in a third direction perpendicular to the first and second directions; second wirings extending in the ...
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JP6776725B2 |
To easily check the state of a resistance change element.A semiconductor integrated circuit includes a crossbar switch circuit, and a determination circuit 102 which measures the electric potential of a data output side wiring of a recon...
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JP6772124B2 |
A switch device according to an embodiment of the technology includes a first electrode, a second electrode that is disposed to face the first electrode, and a switch layer that is provided between the first electrode and the second elec...
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JP2020167210A |
To provide a manufacturing method of a higher performance memory device.A manufacturing method of a memory device according to an embodiment includes forming a first laminated body and a second laminated body at intervals on a base. A fi...
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JP2020155177A |
To provide a semiconductor device in which the maximum applied voltage is relaxed.A semiconductor device of an embodiment has a first sub-switch and a second sub-switch. In the semiconductor device, one of a first voltage and a third vol...
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JP2020155643A |
To provide a storage device capable of improving reliability.The storage device includes: a first conductive layer; a second conductive layer; a first region, provided between the first conductive layer and the second conductive layer, i...
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JP2020155440A |
To miniaturize a memory cell array while maintaining stability of a reference layer.A magnetic storage device includes a first magnetoresistance effect element including first and second laminates containing first and second ferromagneti...
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JP2020155560A |
To provide a memory device with improved endurance characteristics.A memory device according to an embodiment includes a first conductive layer, a second conductive layer, a resistance changing element provided between the first conducti...
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JP2020155579A |
To provide a semiconductor memory device which facilitates micro-fabrication.A semiconductor memory device comprises: a first wire extending in a first direction; a second wire extending in a second direction; a resistance change film pr...
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JP2020155192A |
To improve characteristics of a memory device.A memory device of an embodiment includes: a memory cell MC electrically connected between a first wiring WL and a second wiring BL and including a memory element; a first circuit 700 provide...
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JP2020155642A |
To provide a memory device that can improve reliability.A memory device according to an embodiment includes a first conductive layer extending in a first direction, a second conductive layer extending in a second direction that intersect...
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JP2020155165A |
To provide a resistance change type memory capable of improving a set operation.A resistance change type memory 1 in an embodiment comprises: a memory cell MC capable of reversibly changing between a low resistance state and a high resis...
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JP2020155183A |
To provide a storage device that uses a resistance change storage element to improve appropriate multi-valued storage.A storage device according to the embodiment includes: a memory cell 10 including a resistance change storage element 1...
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JP2020155181A |
To provide a semiconductor memory device capable of suppressing deterioration of an operation margin even if a plurality of bits are accessed.In each word line WL11 to WL23, PCM elements 1111 to 1128 that are connected are divided into t...
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JP2020155166A |
To provide a resistance change type memory capable of improving a reset operation.The resistance change type memory in an embodiment comprises a resistance change film capable of reversibly changing between a low resistance state and a h...
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JP2020155569A |
To provide a storage device including a resistance change storage element with excellent characteristics.The storage device includes a resistance change storage element 40 including: a first electrode 41; a second electrode 42; and an in...
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JP6758124B2 |
To provide a three-dimensional lamination layer chain type storage device and manufacturing method therefor, capable of achieving good storage operation by combining a three-dimensional lamination structure with a chain type storage stru...
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JP6760627B2 |
Embodiments of the present disclosure describe chalcogenide glass compositions and chalcogenide switch devices (CSD.) The compositions generally may include 3% to 15%, silicon, 8% to 16% germanium in, greater than 45% selenium, and 20% t...
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JP6760910B2 |
To provide a method for manufacturing an OTS device, which can realize stable OTS device characteristics by a simple and easy etching process.A method for manufacturing an OTS device is arranged by putting a first conductive part, an OTS...
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JP2020150082A |
To provide a storage device capable of reducing a load applied to a switch element.A memory device according to an embodiment includes a first conductor, a second conductor, a resistance change layer, a first portion, and a second portio...
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JP2020150212A |
To provide a semiconductor memory device in which reliability of a reset operation is not deteriorated.A semiconductor memory device comprises first to fourth multi-hierarchized semiconductor memories 101 to 104. Each semiconductor memor...
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JP2020145415A |
To provide a fabrication method for protecting a memory bit material during an etching process.A memory cell structure includes at least one memory bit layer 112 stacked between top and bottom electrodes. The memory bit layer provides a ...
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JP2020145364A |
To provide a storage device capable of suppressing generation of a semi-selective leak current.The storage device includes: a first conductive layer; a second conductive layer; a resistance change element provided between the first condu...
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JP6750507B2 |
A selective device includes a first electrode, a second electrode, a switch device, and a non-linear resistive device. The second electrode is disposed to face the first electrode. The switch device is provided between the first electrod...
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JP6751478B2 |
The present disclosure discloses a ternary content addressable memory based on a memory diode, which includes a plurality of kernel units having functions of storing data, erasing/writing data, and comparing data; the kernel units are ar...
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JP6750353B2 |
To provide a high-reliability switch circuit which implements an ideal connection of an input line and an output line.A switch circuit comprises: multiple changeover switches for which the numbers of input lines and the numbers of output...
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JP2020136396A |
To provide a resistance change type semiconductor storage in which reliability is improved.A semiconductor storage has first wiring extending in a first direction, multiple second wiring extending in a second direction intersecting the f...
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JP6748209B2 |
The disclosed composition, particularly suitable for resistance switching memories based on metal ion transport, comprises a matrix material of a metal oxide/sulphide/selenide of at least two metals M1 and M2, and a metal M3 which is mob...
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JP6748098B2 |
A process for forming a resistive random-access memory device, the process comprising the steps of: depositing a first electrode on a substrate; forming a porous resistive memory material layer on the first electrode, wherein the porous ...
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JP6746586B2 |
Disclosed is an electronic component (10) comprising a number of switching elements (1) which have, in the following order: a first electrode (16); a molecular layer (18) bonded to a substrate; and a second electrode (20). The molecular ...
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JP6743008B2 |
Embodiments of the present disclosure describe phase-change memory cell implant for dummy array leakage reduction. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM elements...
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JP6738440B2 |
Disclosed are a series of photoisomeric compounds, preparation method therefor and device comprising the compounds, wherein a photoisomeric compound-grephene molecular junction device is formed by linking the photoisomeric compound to a ...
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JP2020119929A |
To directly connect a contact to a fine wiring.A semiconductor device of an embodiment comprises: a semiconductor substrate; first patterns extending in a first direction and having periodicity in a second direction crossing the first di...
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