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WO/2020/227396A1 |
Methods of fabricating a bulk acoustic wave resonator structure for a fluidic device can include a first step of disposing a first conductive material over a portion of a first surface of a substrate to form at least a portion of a first...
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WO/2020/223001A1 |
A method for manufacturing a Bulk Acoustic Wave (BAW) resonator module is provided. The method includes providing a substrate (400), defining a platform region on the surface of the substrate (430), disposing a BAW resonator device (440)...
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WO/2020/223065A1 |
Multichannel, multirate lattice wave filters receive digital signal channels at a first sample rate and include a first multiplexer to combine the digital signal channels into a first digital data stream, and a first lattice wave filter ...
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WO/2020/223547A1 |
A nanoelectromechanical systems (NEMS) oscillator network and methods for its operation are disclosed. The NEMS oscillator network includes one or more network inputs configured to receive one or more input signals. The NEMS oscillator n...
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WO/2020/221655A1 |
The invention relates to a bulk acoustic wave (BAW) device comprising a first BAW resonator (1) and a second BAW resonator (2). The first BAW resonator and the second BAW resonator each comprise a first electrode (11, 21), a second elect...
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WO/2020/219578A1 |
Embodiments disclosed herein include a resonator for use in quantum computing. The resonator can include a housing that is disposed along a resonator axis. The housing can have a first portion extending from a housing distal end to near ...
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WO/2020/218369A1 |
A sensor device comprising: a substrate having a substrate surface; a first IDT electrode positioned upon the substrate surface; a second IDT electrode positioned upon the substrate surface; a waveguide; and a protective film. The wavegu...
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WO/2020/219831A1 |
The present invention relates to a near-field acoustic platform capable of synthesizing high resolution, arbitrarily shaped energy potential wells. A thin and viscoelastic membrane is utilized to modulate acoustic wavefront on a deep, su...
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WO/2020/214681A1 |
A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region a...
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WO/2020/213210A1 |
This invention improves confinement of vibration. A resonator 10 includes: a Si substrate F2; a metal layer E1 formed over one main surface of the Si substrate F2; and a piezoelectric thin film F3 arranged between the Si substrate F2 and...
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WO/2020/210868A1 |
A method of preparing a Metal Organic Framework (MOF) with an acoustically-driven microfluidic platform, the method comprising: depositing a liquid comprising MOF precursors on a piezoelectric substrate of an acoustic microfluidic platfo...
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WO/2020/214687A1 |
A resonator circuit device. The present invention provides for improved resonator shapes using egg-shaped, partial egg-shaped, and asymmetrical partial egg-shaped resonator structures. These resonator shapes are configured to give less s...
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WO/2020/213213A1 |
The present invention provides a resonator and a device that can improve resonator characteristics while suppressing an increase in dimensions. A resonator 13 comprises a vibration part 15 that performs contour vibration, a holder 14 tha...
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WO/2020/213477A1 |
Provided is a vibration device that can detect deformation in the normal direction without interfering with the vibration. The device comprises: a vibration unit that has an oscillator to vibrate in a plane direction; and a sensor that...
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WO/2020/212648A1 |
A microelectromechanical (MEMS) resonator, comprising a spring-mass system having a first weight portion (M1), a second weight portion (M2), and a central spring portion (SP) in between the weight portions.
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WO/2020/209359A1 |
Provided is an elastic wave device resistant to deterioration in electromechanical coupling coefficient and Q characteristics. The elastic wave device 1 is provided with a piezoelectric film 4 layered on a support substrate 2 directly or...
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WO/2020/206982A1 |
A bulk acoustic resonator and a manufacturing method thereof. The method comprises: providing a substrate (301); forming, on a surface of the substrate (301), a plurality of holes (302) arranged at intervals; performing heating processin...
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WO/2020/209190A1 |
Provided is an elastic wave device in which higher order modes can be effectively suppressed. An elastic wave device 1 according to the present invention comprises: a support substrate 4 constituted by a silicon substrate having an ori...
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WO/2020/208999A1 |
The purpose of the present invention is to provide an electronic component accommodating package which, when being sealed with a lid, prevents sealing wax material from entering an area in which an electronic component or the like is mou...
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WO/2020/209153A1 |
This elastic wave device (100) comprises: a support substrate (110) including silicon; and a function layer (115) formed on the support substrate (110). The function layer (115) includes a piezoelectric film (120), and an IDT electrode (...
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WO/2020/209189A1 |
Provided is an elastic wave device in which higher order modes can be effectively suppressed. This elastic wave device 1 is provided with a support substrate 4 which is a silicon substrate, a silicon nitride film 5 which is provided on...
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WO/2020/208308A1 |
A microelectromechanical (MEMS) resonator, comprising a resonator structure having a plurality of beam elements (1-6) and connection elements (C1-C5) with certain geometry, where the plurality of beam elements (1-6) are positioned adjace...
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WO/2020/209152A1 |
An acoustic wave device (100) comprises a support substrate (110) which is formed from a semiconductor material, a functional layer (115) which is formed on the support substrate (110), and an intermediate layer (150) which is formed bet...
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WO/2020/199507A1 |
A bulk acoustic wave resonator and a manufacturing method therefor, a filter, and a radio frequency communication system. A top electrode concave portion (1081) formed at the periphery of a piezoelectric resonance layer (1051) and suspen...
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WO/2020/203044A1 |
The present invention includes: a step for forming an excitation electrode, an extraction electrode, and a first sealing frame on each main surface of a crystal piece 11; a step for forming a second sealing frame on a respective main sur...
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WO/2020/206433A1 |
Acoustic resonator devices and filters are disclosed. A piezoelectric plate is attached to a substrate, a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A first conductor pattern is formed on a...
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WO/2020/202814A1 |
Mounting electrodes other than a pair of mounting electrodes connected to exciting electrodes are each provided with a wire pattern connecting an external connection terminal with an IC mounting terminal. The wire pattern includes a cons...
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WO/2020/199509A1 |
A bulk acoustic wave resonator and a manufacturing method therefor, a filter and a radio-frequency communication system. A bottom electrode protrusion portion (1041) and a top electrode recess portion (1081), which are formed on the peri...
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WO/2020/200478A1 |
The present invention relates to the field of Surface Acoustic Wave (SAW) devices. In particular, a SAW device of the invention has suppressed spurious modes, in particular transversal modes. The SAW device of the invention comprises a p...
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WO/2020/202961A1 |
This tuning-fork-type piezoelectric vibrator (1) comprises: a base (50); a tuning-fork-type piezoelectric vibrating element (10) that has a pair of vibrating arms (60a, 60b) and a pair of connection electrodes (86a, 86b); and a base memb...
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WO/2020/201226A1 |
A surface acoustic wave resonator arrangement comprises a piezoelectric substrate (100) and a surface acoustic wave resonator (110) which includes an interdigital transducer (111,112 ) disposed on the piezoelectric substrate (100). A tre...
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WO/2020/202966A1 |
An electronic device (1), provided with: an electronic component (10) having a mechanical vibration unit (17); a base substrate (30) on which the electronic component (10) is mounted; an intermediate layer (40) forming, between the inter...
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WO/2020/204740A1 |
A method and system are provided for estimating the g-sensitivity of a quartz oscillator, which includes rotating the quartz oscillator successively around each of a plurality of axes constituting a full-rank system, measuring a frequ...
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WO/2020/199504A1 |
Disclosed are a bulk acoustic wave resonator and a manufacturing method therefor, a filter and a radio frequency communication system. A bottom electrode recess (1041) and a top electrode recess (1081) formed on the periphery of a piezoe...
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WO/2020/204045A1 |
This high-order mode surface acoustic wave device comprises a piezoelectric substrate (11) composed of an LiTaO3 crystal or an LiNbO3 crystal, and an interdigital transducer (12) which is embedded in a surface of the piezoelectric substr...
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WO/2020/200809A1 |
The present invention relates to an interrogation device (20) for interrogating an acoustic wave sensor (10), comprising a transmission antenna (21) configured for transmitting an interrogation radiofrequency signal to the acoustic wave ...
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WO/2020/203144A1 |
The present invention suppresses the occurrence of a burr remaining on a quartz oscillating element. This quartz oscillating element manufacturing method includes a step S in which a quartz piece 130, a crosspiece section 110, and a supp...
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WO/2020/201088A1 |
A SAW transducer and a SAW resonator are proposed composed of consecutively arranged unit cells of length L. Slight geometry or material variations such as variations of the metallization ratio η or the unit cell length L affecting the ...
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WO/2020/199505A1 |
A bulk acoustic resonator and a manufacturing method thereof, a filter, and a radio frequency communication system. A lower electrode projection (1041) and an upper electrode projection (1081) formed at the periphery of a piezoelectric r...
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WO/2020/202960A1 |
Provided is a longitudinally coupled resonator type elastic wave filter capable of suppressing variations in attenuation in a frequency range near a low-frequency side of a pass band. This longitudinally coupled resonator type elastic ...
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WO/2020/203092A1 |
Provided is an elastic wave device in which a resonator has a large impedance ratio. An elastic wave device 1 is provided with: a support substrate; a piezoelectric body 4 for which LiTaO3 is used; a first electrode 5 that is provided ...
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WO/2020/204036A1 |
Provided is an elastic wave device with which it is possible to increase Q characteristics. In the elastic wave device 1, an energy confined layer 3, a piezoelectric layer 7 in which a Y-cut X-propagating lithium tantalate with a cut ang...
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WO/2020/199506A1 |
A bulk acoustic wave resonator and a manufacturing method therefor, a filter and a radio-frequency communication system. A top electrode protrusion portion that is formed on the periphery of a piezoelectric resonance layer (1051) and is ...
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WO/2020/199510A1 |
A bulk acoustic wave resonator and a manufacturing method therefor, a filter and a radio-frequency communication system. A bottom electrode recess portion (1041) that is formed on the periphery of a piezoelectric resonance layer (1051) a...
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WO/2020/199511A1 |
A bulk acoustic resonator and a manufacturing method therefor, a filter, and a radio frequency communication system. A bottom electrode protruding portion (1041) formed on the periphery of a piezoelectric resonating layer (1051) and susp...
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WO/2020/199299A1 |
A method for manufacturing a piezoelectric thin film resonator on a non-silicon substrate. The method comprises the following steps: depositing a copper thin film (202) on a silicon wafer (201); coating a photoresist (203) on the copper ...
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WO/2020/199508A1 |
A bulk acoustic resonator and a manufacturing method thereof, a filter, and a radio frequency communication system. A lower electrode recess (1041) and an upper electrode protrusion (1081) formed at the periphery of a piezoelectric reson...
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WO/2020/203093A1 |
Provided is an elastic wave device that makes it possible to easily perform electrical connection with the outside or another electronic component element portion. An elastic wave device 1 is provided with a support substrate 2, a piez...
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WO/2020/200822A1 |
The present invention relates to a method of interrogating an acoustic wave sensor, compris- ing transmitting, by an interrogator, an interrogation radiofrequency signal to the acoustic wave sensor by means of a transmission antenna, rec...
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WO/2020/202962A1 |
A tuning fork type piezoelectric vibrator (1) is provided with: a tuning fork type piezoelectric vibration element (10) that has a basic part (50), a pair of vibration arm parts (60a, 60b), and a pair of connection electrodes (86a, 86b);...
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